EGS4 simulation for positron source on LINAC-based slow positron beam line

doi:null

您当前的位置：

首页 >

文章列表页 >

EGS4 simulation for positron source on LINAC-based slow positron beam line

更新时间：2021-03-12

- EGS4 simulation for positron source on LINAC-based slow positron beam line
- NUCLEAR TECHNIQUES Issue 6, (2000)
- 作者机构：
  
  1. 中国科学院高能物理研究所核分析技术开放研究实验室,北京
  2. ,100080
  3. 中国科学院
- 作者简介：
- 基金信息：
  
  “中国科学院九五重点项目!KJ952－SI－416;国家自然科学基金!1980501
- DOI：
  CLC： TL5
- Published：01 June 2000
- 稿件说明：
移动端阅览
[1]于润升,魏龙,裴国玺,王宝义,陈红民,张天保,孟伯年,李大庆.基于LINAC慢正电子源的EGS4模拟[J].核技术,2000(06):405-410.

EGS4 simulation for positron source on LINAC-based slow positron beam line[J]. Nuclear techniques, 2000, (6): 405-410.
[1]于润升,魏龙,裴国玺,王宝义,陈红民,张天保,孟伯年,李大庆.基于LINAC慢正电子源的EGS4模拟[J].核技术,2000(06):405-410. DOI：

EGS4 simulation for positron source on LINAC-based slow positron beam line[J]. Nuclear techniques, 2000, (6): 405-410. DOI：

摘要

介绍基于BEPCLINAC和BFELLINAC（北京正负电子对撞机和北京自由电子激光装置电子直线加速器）慢正电子束设备中正电子源部分的Monte－Carlo模拟过程。结果表明，从Ta靶出射的快正电子产额在BEPCLINAC和BFELMNAC运行于兼容模式时分别为184×1010/s和3．9×1011/s。若慢化体慢化效率在10-4量级，基于BEPCLINAC和BFELLINAC慢正电子束的慢正电子产额分别为106－107/s和107－108/s。

Abstract

A Monte-Carlo simulation about the positron source used on the BEPC andBFEL LINAC-based slow positron beam lines was reviewed. The results showed thatwhen the BEPC LINAC was operated under parasitic condition

the fast positronyield of BEPC LINAC-based Slow Positron Beam Line were 1.84 ×1010e+ /s for Tatarget

the slow positron yield was about 106 to 107e+/s. When the BFEL LINAC wasoperated under parasitic condition

the fast positron yield was 3.9 × 1011e+/s and theslow positron yield was about 107 to 10°e+/s.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Simulation study of medical isotope production using electron accelerator-driven photoneutron source

Parameter measurement for a 4MeV electron linear accelerator

Optimized calculation of roof thickness of building for L3000 electron linear accelerator

Studies and applications of plastics-sealed diodes irradiated with high energy electron

Related Author

ZHANG Zixiong

LI Kaixuan

WEI Qianglin

LIU Yibao

ZHANG Qintuo

宋文杰

卫增泉

刘玉岩

Related Institution

(Engineering Research Center of Nuclear Technology Application, Ministry of Education (East China University of Technology), , )

School of Nuclear Science and Engineering, East China University of Technology

Engineering Technology Research Center of Nuclear Radiation Detection and Application

Institute of Modern Physics, the Chinese Academy of Sciences

Peking University

AI问答

Address：2019 Jialuo Road, Jiading, Shanghai, China Postal code：201800
Tel：021-39194977 Email：LHB@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
Total Visits：880886 Visits Today：413

⁰