Study of radiation damage and annealing effects in high energy heavy ion irradiated GaP by positron annihilation

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Study of radiation damage and annealing effects in high energy heavy ion irradiated GaP by positron annihilation

更新时间：2021-03-12

- Study of radiation damage and annealing effects in high energy heavy ion irradiated GaP by positron annihilation
- NUCLEAR TECHNIQUES Issue 6, (2000)
- 作者机构：
  
  1. 新疆工学院基础部
  2. 中国原子能科学研究院,北京
  3. ,102413
- 作者简介：
- 基金信息：
  
  国家自然科学基金!19835050;预研基金资助!97J11．2．8HZ010
- DOI：
  CLC： O472
- Published：01 June 2000
- 稿件说明：
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[1]黄龙,王荣,徐勇军,朱升云.GaP高能重离子辐照损伤及退火的正电子湮没研究[J].核技术,2000(06):359-362.

Study of radiation damage and annealing effects in high energy heavy ion irradiated GaP by positron annihilation[J]. Nuclear techniques, 2000, (6): 359-362.
[1]黄龙,王荣,徐勇军,朱升云.GaP高能重离子辐照损伤及退火的正电子湮没研究[J].核技术,2000(06):359-362. DOI：

Study of radiation damage and annealing effects in high energy heavy ion irradiated GaP by positron annihilation[J]. Nuclear techniques, 2000, (6): 359-362. DOI：

摘要

用正电子湮没寿命技术研究了2.4×1015／cm2和2．2×1016／cm285MeV19F离子辐照GaP的辐照损伤及其退火效应。结果表明，高低两种注量辐照在GaP中产生浓度较高的单空位。在300—1023K温度范围内测量了正电子湮没寿命随退火温度的变化。低注量辐照样品在退火过程中有双空位的形成；而高住量辐照样品中观察到比双空位更复杂的缺陷形式，其完全被退火的温度比低剂量辐照的高250K。

Abstract

The radiation defects and damage in N-type GaP irradiated by 85MeV 19F ionsat fluences of 2.4 ×10 15/cm2 and 2.2× 1016/cm2 as a function of annealing temperaturefrom 300K to 1023K were investigated by positron annihilation lifetime technique.Monovacancies were created in the irradiated N-type GaP

and the concentration ofmonovacancies was proportional to the irradiation fluence. Defects more complicatedthan di-vacancies in the high fluence irradiated GaP and di-vacancies in lowfluence irradiated GaP were observed during annealing process

respectively. Thecomplete annealing temperature of the defects for low fluence irradiated GaP was250K lower than that for high fluence irradiated GaP.

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