A positron annihilation Study for InP(InGaAsP)/InP structure grown by plasma assisted molecular beam epitaxy

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A positron annihilation Study for InP(InGaAsP)/InP structure grown by plasma assisted molecular beam epitaxy

更新时间：2021-03-12

- A positron annihilation Study for InP(InGaAsP)/InP structure grown by plasma assisted molecular beam epitaxy
- NUCLEAR TECHNIQUES Issue 6, (2000)
- 作者机构：
  
  1. 天津师范大学,天津
  2. ,300074
- 作者简介：
- 基金信息：
  
  国家自然科学基金!69886001
- DOI：
  CLC： TN304
- Published：01 June 2000
- 稿件说明：
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[1]白人骥,赵杰.用正电子湮没方法研究氦离子等离子体辅助分子束外延InP(InGaAsP)/InP结构[J].核技术,2000(06):366-370.

A positron annihilation Study for InP(InGaAsP)/InP structure grown by plasma assisted molecular beam epitaxy[J]. Nuclear techniques, 2000, (6): 366-370.
[1]白人骥,赵杰.用正电子湮没方法研究氦离子等离子体辅助分子束外延InP(InGaAsP)/InP结构[J].核技术,2000(06):366-370. DOI：

A positron annihilation Study for InP(InGaAsP)/InP structure grown by plasma assisted molecular beam epitaxy[J]. Nuclear techniques, 2000, (6): 366-370. DOI：

摘要

用氦离子等离子体辅助分子束外延（PAMBE）方法生长了InP（InGaAsP）／IuP结构。结果发现，PAMBE外延层具有很高的电阻率和很快的光反应特性。用慢正电子湮没方法研究了这一外延层，测量结果说明这些特性与等离子体造成的缺陷及缺陷随温度变化有直接关系。

Abstract

A structure of InP(InGaAsP)/InP was grown by He Plasma Assisted MolecularBeam Epitaxy (PAMBE). The epitaxy layer had a high resistivity and very fast lightresponse. The results of positron annihilation spectrum showed that those electricand optical characteristics were linked with the defects and its evolution created byPAMBE.

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A positron annihilation study for InP(InGaAsP)/InP structure grown by Plasma assisted molecular beam epitaxy

Related Author

BAI Renji ZHAO Jie

赵杰

Related Institution

Department of Physics,Tianjin Normal University

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