Production of high-tension high-power switch transistors by high energy electron irradiation

Hang Desheng LAI Qiji GAO Peng ZHU Yizhang YANG Congqun WANG Houwen XI Dexun FENG Wenquan

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Production of high-tension high-power switch transistors by high energy electron irradiation

更新时间：2021-03-12

- Production of high-tension high-power switch transistors by high energy electron irradiation
- NUCLEAR TECHNIQUES Issue 10, (2000)
- 作者机构：
  
  南京大学,南京,210008
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN323
- Published：01 October 2000
- 稿件说明：
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[1]杭德生,赖启基,高澎,朱以漳,杨从群,王厚稳,席德勋,冯文荃.采用高能电子束辐照技术制造高反压大功率开关晶体管[J].核技术,2000(10):743-745.

Hang Desheng LAI Qiji GAO Peng ZHU Yizhang YANG Congqun WANG Houwen XI Dexun FENG Wenquan. Production of high-tension high-power switch transistors by high energy electron irradiation[J]. Nuclear techniques, 2000, (10): 743-745.
[1]杭德生,赖启基,高澎,朱以漳,杨从群,王厚稳,席德勋,冯文荃.采用高能电子束辐照技术制造高反压大功率开关晶体管[J].核技术,2000(10):743-745. DOI：

Hang Desheng LAI Qiji GAO Peng ZHU Yizhang YANG Congqun WANG Houwen XI Dexun FENG Wenquan. Production of high-tension high-power switch transistors by high energy electron irradiation[J]. Nuclear techniques, 2000, (10): 743-745. DOI：

摘要

应用最佳能量为１２ＭｅＶ的电子束对大功率开关晶体管进行了辐照．结果表明，经电子束辐照的开关晶体管具有开关特性优良、热稳定性高、器件参数一致性好等特点。

Abstract

The high energy (12MeV) electrons were used to irradiate the high-power switch transistors. The irradiated transistors had good switch performance

high thermal stability and parameter consistency.

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