Formation Of SOI films by ion implantation into Si and their properties

LU Diantong HUANG Dong

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Formation Of SOI films by ion implantation into Si and their properties

更新时间：2021-03-12

- Formation Of SOI films by ion implantation into Si and their properties
- NUCLEAR TECHNIQUES Issue 10, (2000)
- 作者机构：
  
  1. 北京师范大学低能核物理研究所!北京市辐射中心北京,100875
  2. Fraungofer-Arbeitsgruppe fur Integrierte Schaitungem Abteilung fur
  3. Department of Electronic and Electrical Engineering! University of Surrey
  4. Guilfo
- 作者简介：
- 基金信息：
  
  国家自然科学基金!（69776006）;北京市自然科学基金!（4952002）资助
- DOI：
  CLC： TN304.055
- Published：01 October 2000
- 稿件说明：
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[1]卢殿通,黄栋,Heiner Ryssel,Hemment P L F.离子注入SOI薄膜材料的制备及性能[J].核技术,2000(10):697-702.

LU Diantong HUANG Dong. Formation Of SOI films by ion implantation into Si and their properties[J]. Nuclear techniques, 2000, (10): 697-702.
[1]卢殿通,黄栋,Heiner Ryssel,Hemment P L F.离子注入SOI薄膜材料的制备及性能[J].核技术,2000(10):697-702. DOI：

LU Diantong HUANG Dong. Formation Of SOI films by ion implantation into Si and their properties[J]. Nuclear techniques, 2000, (10): 697-702. DOI：

摘要

ＳＯＩ－ＣＭＯＳ电路具有高速度、低功耗、抗辐照等优点。用氧、氮离子注入硅中，得到性能良好的ＳＩＭＯＸ和ＳＩＭＮＩ薄膜材料。用扩展电阻、霍耳效应和深能级瞬态谱等多种方法研究了ＳＯＩ材料表面界面的电学性能。并对各种方法进行了讨论。结果显示；用分步注入和分步退火制备的ＳＯＩ材料大大地改善了材料的电学性能。

Abstract

The SOI (silicon-on-insulator) technology was regarded as a very important technique of the silicon-integrated circuit in the 21 century. The SIMOX (separation by implanted oxygen) and SIMNI (separation by implanted nitrogen) films were formed by O+ or N+ ion implantation into silicon with several methods. The SR (spreading resistance)

Hall effects and DLTS (deep-level transient spectroscopy) measurements were used to analyse the surface electrical properties of the SOI structures. The results show that the step-implanted SOI films have good electrical properties.

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