您当前的位置:
首页 >
文章列表页 >
A study on process, structure and characteristics of TiN thick film prepared by MBMI technology
更新时间:2021-03-12
    • A study on process, structure and characteristics of TiN thick film prepared by MBMI technology

    • NUCLEAR TECHNIQUES   Issue 10, (2000)
    • CLC: TB43
    • Published:01 October 2000

    移动端阅览

  • REN Chunsheng MOU Zongxin LIU Zhenmin LONG Zhenhu YANG Liming. A study on process, structure and characteristics of TiN thick film prepared by MBMI technology[J]. Nuclear techniques, 2000, (10): 678-682. DOI:

  •  
  •  

0

Views

65

下载量

1

CSCD

Alert me when the article has been cited
提交
Tools
Download
Export Citation
Share
Add to favorites
Add to my album

Related Articles

Effect of substrate temperature on surface morphology and mechanical properties of Ti films
Effect on ZnO thin film photoluminescence after Ag ion implantation
Formation of color centers of optical waveguide in LN crystal by implanting it with 3 MeV oxygen ions
Photoluminescence effects of a-SiO2 films implanted with C ions and irradiated by Pb ions
XRD study on SixMn1-x diluted magnetic semiconductors prepared by ion implantation

Related Author

WANG Xing
MA Mingwang
WAN Ruiyun
WANG Lei
TAN Xiaohua
LI Hao
LIU Changlong
DU Jifu1

Related Institution

Institute of Electronic Engineering, China Academy of Engineering Physics
School of Science, Tianjin University
Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology
College of Nuclear technology,Chemistry and Biology,Hubei University of Science and technology,Xianning 437100,China) 2
四川大学原子核科学技术研究所
0