ZHU Jie CUI Mingqi ZHENG Lei ZHAO Yidong WANG Zhanshan. A study of annealed Mo/Si/C multilayer film by synchrotron radiation[J]. Nuclear techniques, 2004, (7): 489-493.
ZHU Jie CUI Mingqi ZHENG Lei ZHAO Yidong WANG Zhanshan. A study of annealed Mo/Si/C multilayer film by synchrotron radiation[J]. Nuclear techniques, 2004, (7): 489-493.DOI:
A study of annealed Mo/Si/C multilayer film by synchrotron radiation
A new multilayer film consisting of Mo/Si/C has been fabricated by magnetic sputter deposition. Its thermal stability and reflectivity(near Brewster angle 45° incidence) have been researched using synchrotron radiation at Beijing Synchrotron Radiation Facility (BSRF). It was found that the reflectivity achieved 42% (at 45°
92eV) before the thermal treatment
thermal stability was increased because of the C sublayer’s entering
and its reflectivity was 6.8% at 97eV after annealing at 600 ℃. Due to the diffusion of amorphous carbon in interface layer
the structure of Mo/Si/C multilayer film was changed
and the double diffraction peaks during low-angle X-ray diffraction (LAXD) were observed.