X-ray diffraction studies on AlGaN/GaN heterostructures

TAN Weishi1; 2 XU Jin2 CAI Hongling2 SHEN Bo2 WU Xiaoshan2 JIANG Shusheng2                                                   ZHENG Wenli3 JIA Quanjie3                         1

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X-ray diffraction studies on AlGaN/GaN heterostructures

更新时间：2021-03-12

- X-ray diffraction studies on AlGaN/GaN heterostructures
- NUCLEAR TECHNIQUES Issue 6, (2004)
- 作者机构：
  
  1. 南京理工大学理学院应用物理系,南京大学固体微结构物理国家重点实验室南京大学物理系,南京大学固体微结构物理国家重点实验室南京大学物理系,南京大学固体微结构物理国家重点实验室南京大学物理系,南京大学固体微结构物理国家重点实验室南京大学物理系,南京大学固体微结构物理国家重点实验室南京大学物理系,中国科学院高能物理研究所,中国科学院高能物理研究所,南京,210094
  2. 南京大学固体微结构物理国家重点实验室南京大学物理系南京210093,南京210093,南京210093,南京210093,南京210093,南京210093,北京100039,北京,100039
- 作者简介：
- 基金信息：
  
  国家自然科学基金(No. 90201039, 10023001, 10174030);国家高科技(863)发展计划资助项目
- DOI：
  CLC： O472.3
- Published：01 June 2004
- 稿件说明：
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[1]谭伟石,徐金,蔡宏灵,沈波,吴小山,蒋树声,郑文莉,贾全杰.AlGaN/GaN异质结构的X射线衍射研究[J].核技术,2004(06):413-416.

TAN Weishi1, 2 XU Jin2 CAI Hongling2 SHEN Bo2 WU Xiaoshan2 JIANG Shusheng2 ZHENG Wenli3 JIA Quanjie3 1. X-ray diffraction studies on AlGaN/GaN heterostructures[J]. Nuclear techniques, 2004, (6): 413-416.
[1]谭伟石,徐金,蔡宏灵,沈波,吴小山,蒋树声,郑文莉,贾全杰.AlGaN/GaN异质结构的X射线衍射研究[J].核技术,2004(06):413-416. DOI：

TAN Weishi1, 2 XU Jin2 CAI Hongling2 SHEN Bo2 WU Xiaoshan2 JIANG Shusheng2 ZHENG Wenli3 JIA Quanjie3 1. X-ray diffraction studies on AlGaN/GaN heterostructures[J]. Nuclear techniques, 2004, (6): 413-416. DOI：

摘要

在（0001）取向的蓝宝石（α-Al2O3）基片上用金属有机物化学气相沉积（MOCVD）方法生长了势垒层厚度为1000?的Al0.22Ga0.78N/GaN异质结构;利用高分辨X射线衍射（HRXRD）技术测量了样品的对称反射（0002）和非对称反射（1014）的倒易空间Mapping（RSM）。结果表明;样品势垒层的内部微结构与应变状态和下层i-GaN的微结构与应变状态互相关联。样品势垒层的微应变已经发生弛豫;而且具有一种“非常规”应变弛豫状态;这种弛豫状态的来源可能与n-AlGaN的内部缺陷以及i-GaN/α-Al2O3界面应变弛豫状态有关。掠入射X射线衍射研究表明样品内部的应变是不均匀的;由表层的横向压应变状态过渡到下层的张应变状态;与根据倒易空间Mapping分析得到的结果一致。

Abstract

A modulation-doped AlxGa1-xN/GaN heterostructure with 1000? Si-doped n-Al0.22Ga0.78N barrier ( n-AlGaN ) was deposited on ( 0001 ) -oriented sapphire( α-Al2O3 ) by metal-organic chemical vapor deposition ( MOCVD ) . The reciprocal space mappings ( RSMs ) of symmetric reflection ( 0002 ) and asymmetric reflection ( 1014 ) were measured with the method of high resolution X-ray diffraction ( HRXRD ) . The results indicate that the microstructure and strain status of the barrier correlate to those of the i-GaN layer. The barrier holds an “abnormal” strain-relaxation status

which probably results from the internal defects of n-AlGaN and the strain relaxation status at the i-GaN/α-Al2O3 interfaces. The results from grazing incidence X-ray diffraction show that the strain in barrier is nonuniform

which is consistent with the results from the reciprocal space mappings.

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Related Author

TAN Weishi~

蔡宏灵

吴小山

蒋树声

贾全杰

郭立平

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Related Institution

1, 2) CAI Hongling~2 WU Xiaoshan~2 JIANG Shusheng~2 JIA Quanjie~3 GUO Liping~3 HE Qing~3 GAO Ju~4 1

南京大学固体微结构物理国家重点实验室南京大学物理系

中国科学院高能物理研究所

香港大学物理系

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