Composition in Ge/Si(001) quantum dots directly measured by grazing incidence X-ray anomalous scattering/diffraction

HE Qing JIA Quanjie JIANG Xiaoming

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Composition in Ge/Si(001) quantum dots directly measured by grazing incidence X-ray anomalous scattering/diffraction

更新时间：2021-03-12

- Composition in Ge/Si(001) quantum dots directly measured by grazing incidence X-ray anomalous scattering/diffraction
- NUCLEAR TECHNIQUES Issue 6, (2004)
- 作者机构：
  
  1. 中国科学院高能物理研究所
  2. 中国科学院高能物理研究所,北京,100039
- 作者简介：
- 基金信息：
  
  国家自然科学基金(10174081)资助
- DOI：
  CLC： O73
- Published：01 June 2004
- 稿件说明：
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[1]何庆,贾全杰,姜晓明.Ge/Si(001)量子点组分的掠入射X射线反常衍射测量[J].核技术,2004(06):409-412.

HE Qing JIA Quanjie JIANG Xiaoming. Composition in Ge/Si(001) quantum dots directly measured by grazing incidence X-ray anomalous scattering/diffraction[J]. Nuclear techniques, 2004, (6): 409-412.
[1]何庆,贾全杰,姜晓明.Ge/Si(001)量子点组分的掠入射X射线反常衍射测量[J].核技术,2004(06):409-412. DOI：

HE Qing JIA Quanjie JIANG Xiaoming. Composition in Ge/Si(001) quantum dots directly measured by grazing incidence X-ray anomalous scattering/diffraction[J]. Nuclear techniques, 2004, (6): 409-412. DOI：

摘要

利用掠入射X射线反常散射/衍射实验技术对Si（001）上生长的单层和双层Ge量子点的组分分布进行了直接测量;结果显示;在Si间隔层厚度为90nm时得到的双层Ge量子点与单层Ge量子点的组分及其分布特征是几乎相同的。

Abstract

The composition in the free-standing and bilayer Ge quantum dots grown on Si( 001 ) substrate was directly determined by grazing incident X-ray anomalous scattering/diffraction ( GIXASD ) . The composition and its variation in the bilayer quantum dots separated by a 90nm thick Si spacer are similar to those of the free-standing quantum dots.

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