A measurement System to detect the radiation damage inside CMOS operational amplifier

GUO Qi; LU Wu; REN Diyuan; YU Xuefeng; ZHANG Guoqiang FAN Long; YAN Rongliang

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A measurement System to detect the radiation damage inside CMOS operational amplifier

更新时间：2021-03-12

- A measurement System to detect the radiation damage inside CMOS operational amplifier
- NUCLEAR TECHNIQUES Issue 9, (2000)
- 作者机构：
  
  1. 中国科学院新疆物理研究所,乌鲁木齐,830011
  2. 中国科学院新疆
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN72
- Published：01 September 2000
- 稿件说明：
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[1]郭旗,陆妩,任迪远,余学锋,张国强,范隆,严荣良.CMOS运算放大器内部电路电离辐射损伤研究测试系统[J].核技术,2000(09):637-641.

GUO Qi, LU Wu, REN Diyuan, et al. A measurement System to detect the radiation damage inside CMOS operational amplifier[J]. Nuclear techniques, 2000, (9): 637-641.
[1]郭旗,陆妩,任迪远,余学锋,张国强,范隆,严荣良.CMOS运算放大器内部电路电离辐射损伤研究测试系统[J].核技术,2000(09):637-641. DOI：

GUO Qi, LU Wu, REN Diyuan, et al. A measurement System to detect the radiation damage inside CMOS operational amplifier[J]. Nuclear techniques, 2000, (9): 637-641. DOI：

摘要

为了从内部研究ＣＭＯＳ运算放大器的电离辐射损伤机理，用由计算机控制的运算放大器内部单元电路损伤试验测试系统测量运放电路整体性能参数在电离辐射环境中的变化，观察电路内部各功能单元电路和ＭＯＳＦＥＴ的辐照损伤特性；该系统能将不同功能单元电路的损伤对电路整体性能的影响进行测试。

Abstract

A measurement system to detect the radiation damage inside CMOS operational amplifier was described in this paper. This system can observe the damage of functional sub-circuits in an operational amplifer while measuring the response of its characteristics

furthermore the various influence of the damage of each functional sub-circuits on the degradation of the whole circuit can be investigated using this system.

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Related Institution

Xinjiang Technical Institute of Physics and Chemistry, the Chinese Academy of Sciences

中国科学院新疆理化技术研究所乌鲁木齐 830011 中国科学院研究生院

Shanghai Institute of Applied Physics, Chinese Academy of Sciences, Shanghai 201800, China) 2

University of Chinese Academy of Sciences

Shanghai Advanced Research Institute, Chinese Academy of Sciences

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