This work focuses on the rocking curves of H~+-implanted single silicon crystal detected by Four-Crystal X-ray diffractmeter. The samples were annealed under different temperatures. Lattice defect in H+-implanted silicon crystals was detected by Rutherford Backscattering Spectrometry. It appeared that H-related complex didn’t crush until annealing temperature reached about 400C. At that temperature Hi was formed

deflated in silicon lattice and strained the lattice. But defects didn’t come into being in large quantity. The lattice was undamaged. When annealing temperature reached 500

strain induced by H2 deflation crashed the silicon lattice. A large number of deflects were formed. At the same time bubbles in the crystal and blister/flaking on the surface could be observed.