Damaging enhancement on Inp[l00] surface induced by K-shell photoionization absorption of phosphorus or indium

DAI Huiying

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Damaging enhancement on Inp[l00] surface induced by K-shell photoionization absorption of phosphorus or indium

更新时间：2021-03-12

- Damaging enhancement on Inp[l00] surface induced by K-shell photoionization absorption of phosphorus or indium
- NUCLEAR TECHNIQUES Issue 3, (2000)
- 作者机构：
  
  1. 解放军空军电讯工程学院,西安,710077
  2. 中国科学院新疆物理研究所,乌鲁木齐,830011
  3. 中国科学院高能物理研究所,北京,100039
  4. 解放军空军电讯工程学院!西安710077中国科学院新疆物理研究所!乌鲁木齐830011中国科学院高能物理研究所,北京,100039
- 作者简介：
- 基金信息：
  
  国家自然科学基金!19575066
- DOI：
  CLC： O571
- Published：01 March 2000
- 稿件说明：
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[1]戴慧莹,靳涛,崔明启,黎刚.P和In原子K壳层X光吸收对InP单晶表面的损伤增强作用[J].核技术,2000(03):155-158.

DAI Huiying. Damaging enhancement on Inp[l00] surface induced by K-shell photoionization absorption of phosphorus or indium[J]. Nuclear techniques, 2000, (3): 155-158.
[1]戴慧莹,靳涛,崔明启,黎刚.P和In原子K壳层X光吸收对InP单晶表面的损伤增强作用[J].核技术,2000(03):155-158. DOI：

DAI Huiying. Damaging enhancement on Inp[l00] surface induced by K-shell photoionization absorption of phosphorus or indium[J]. Nuclear techniques, 2000, (3): 155-158. DOI：

摘要

用两组能量围绕Ｐ和ＩｎＫ壳层结合能上下的同步辐射单色Ｘ光对ＩｎＰ单晶［１００］表面进行辐照。结果表明，无论Ｘ光子被Ｐ原子Ｋ壳层吸收还是被Ｉｎ原子Ｋ壳层吸收，ＩｎＰ单晶［１００］表面Ｐ原子芯能级２Ｐ电子态变化明显。Ｐ和Ｉｎ原子Ｋ壳层Ｘ光吸收对ＩｎＰ单晶表面辐射损伤增强因子分别为４．４ｘ１０－６ｋｇ／Ｃ和３．１ｘ１０－５ｋｇ／Ｃ

Abstract

InP[100] surface was irradiated by monochromatic synchrotron X-rays above (2.153 or 27.98keV) and below (2.140 or 27.85keV) the K-shell binding energy of phosphorus or indium. The experimental results showed that the shapes of XPS P2p. peak changed greatly whether the photon absorption occurred at K-shell of phosphorus or indium atom. The enhancement factors of K-shell absorption for P and In were 4.4 10~-6kg/C and 3.1 10~-5kg/C respectively.

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