Research on secondary package shielding of hard X-rays for integrated circuits

GUO Hongxia~1 HAN Fubin~1 CHEN Yusheng~1 XIE Yaning~2 HUANG Yuying~2 HE Wei~2 HU Tiandou~2 WEI Ning~3 YU Lunzheng~3 1

doi:null

您当前的位置：

首页 >

文章列表页 >

Research on secondary package shielding of hard X-rays for integrated circuits

更新时间：2021-03-12

- Research on secondary package shielding of hard X-rays for integrated circuits
- NUCLEAR TECHNIQUES Issue 12, (2004)
- 作者机构：
  
  1. 西北核技术研究所
  2. 中国科学院高能物理研究所
  3. 骊山微电子公司
  5. ,西安,710075
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN405
- Published：01 December 2004
- 稿件说明：
移动端阅览
[1]郭红霞,韩福斌,陈雨生,谢亚宁,黄宇营,何伟,胡天斗,卫宁,于伦正.集成电路的二次封装屏蔽硬X射线研究[J].核技术,2004(12):968-970.

GUO Hongxia~1 HAN Fubin~1 CHEN Yusheng~1 XIE Yaning~2 HUANG Yuying~2 HE Wei~2 HU Tiandou~2 WEI Ning~3 YU Lunzheng~3 1. Research on secondary package shielding of hard X-rays for integrated circuits[J]. Nuclear techniques, 2004, (12): 968-970.
[1]郭红霞,韩福斌,陈雨生,谢亚宁,黄宇营,何伟,胡天斗,卫宁,于伦正.集成电路的二次封装屏蔽硬X射线研究[J].核技术,2004(12):968-970. DOI：

GUO Hongxia~1 HAN Fubin~1 CHEN Yusheng~1 XIE Yaning~2 HUANG Yuying~2 HE Wei~2 HU Tiandou~2 WEI Ning~3 YU Lunzheng~3 1. Research on secondary package shielding of hard X-rays for integrated circuits[J]. Nuclear techniques, 2004, (12): 968-970. DOI：

摘要

在集成电路X射线剂量增强效应研究的基础上

提出对典型器件开展硬X射线二次封装屏蔽加固技术研究。首先用Monte Carlo方法进行了模拟计算。结果表明

针对硬X射线选用高Z材料作二次封装材料可以达到较好的屏蔽效果。根据计算的结果

在北京同步辐射装置上

利用已经建立的存储器测试系统

对采用不同厚度封装材料的二次封装集成电路SRAM 62256作了屏蔽效应实验

证实了采用二次封装屏蔽加固技术方法后

电路抗X射线的总剂量失效阔值提高了一个量级。建立的屏蔽加固方法对提高器件抗辐射能力具有重要意义。

Abstract

On the basis of study of X-ray dose enhancement effect for integrated circuits

hardening technology of secondary package shielding is proposed for typical devices. In the paper

Monte Carlo method was used for calculating the shielding effect. It has been proven that the shielding with high Z material (e.g. tungsten

tantalum) as package stuff is effective against X-ray according to the simulation results

the secondary package technology can therefore be adopted for typical semiconductor devices. Using the established test setup

an experiment on validation of this technology was made on BSRF. SRAM 62256 with different thicknesses of package material is chosen in the experiment. Tolerance X-ray dose for the IC is found to increase by one order of magnitude. The established method is very important for improving the hardening level of IC.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Simulation calculation of DNA damage induced by high-energy protons and heavy ions in space

Simulation study on the dosimetric parameters of domestically produced high-dose-rate brachytherapy ¹⁹²Ir source

SSA-XGBoost model based high-precision density prediction method for well logging

Monte Carlo simulation of delayed γ-rays ionizing the atmosphere based on debris motion model

The method of measuring electron beam parameters based on laser Compton scattering

Related Author

QI Jie

YAN Qingqian

HAN Jinpeng

AN Xingtao

WANG Ji

YANG Zhijun

WANG Peiwei

WU Jinjie

Related Institution

Department of Occupational Radiological Health, Nanjing Municipal Center for Disease Control and Prevention

Hebei University of Science and Technology

National Institute of Metrology

College of Geophysics, China University of Petroleum

Northwest Institute of Nuclear Technology

AI问答

Address：2019 Jialuo Road, Jiading, Shanghai, China Postal code：201800
Tel：021-39194977 Email：LHB@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
Total Visits：881077 Visits Today：604

⁰