Compared to other Next Generation Lithography ( NGL) techniques

X-ray lithography has many ad- vantages

such as large process latitude

high throughput

extremely long depth of focus

large exposure field sizes

and low cost

and the more important thing is that X-ray lithography technology is relatively mature. For 100 nm resolution synchrotron radiation X-ray lithography system

its wavelength is in the range of 0.7—1.0 nm; and when the resolution is below 50 nm

its wavelength should be in 0.2 nm to 0.4 nm. In this paper

the possibility of designing a 50 nm resolution X-ray lithography system for Beijing Synchrotron Radiation Facility 3B1A beamline is discussed.