Growth and characterization of ZnO thin film prepared   by molecular-beam epitaxy on Si(100)

ZHOU Yingxue    1; 3    SHI Xianghua  2  YU Gencai  1  ZHANG Xinyi  3    YAN Wensheng  4  WEI Shiqiang  4  XIE Yaning  5  1

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Growth and characterization of ZnO thin film prepared by molecular-beam epitaxy on Si(100)

更新时间：2021-03-12

- Growth and characterization of ZnO thin film prepared by molecular-beam epitaxy on Si(100)
- NUCLEAR TECHNIQUES Issue 1, (2003)
- 作者机构：
  
  1. 复旦大学物理系应用表面物理国家重点实验室
  2. 长沙电力学院物理系
  3. 复旦大学同步辐射研究中心
  4. 中国科学技术大学国家同步辐射实验室
  5. 中国科学院高能物理研究所同步辐射室上海200433复旦大学同步辐射研究中心上海,200433
  6. ,北京,100039
- 作者简介：
- 基金信息：
  
  国家重点基础研究专项 (G2 0 0 1cb3 0 95 0 5 )和表面物理实验室开放课题的资助
- DOI：
  CLC： TB43
- Published：01 January 2003
- 稿件说明：
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[1]周映雪,史向华,俞根才,张新夷,阎文胜,韦世强,谢亚宁.分子束外延生长ZnO薄膜及性能研究[J].核技术,2003(01):9-12.

ZHOU Yingxue 1, 3 SHI Xianghua 2 YU Gencai 1 ZHANG Xinyi 3 YAN Wensheng 4 WEI Shiqiang 4 XIE Yaning 5 1. Growth and characterization of ZnO thin film prepared by molecular-beam epitaxy on Si(100)[J]. Nuclear techniques, 2003, (1): 9-12.
[1]周映雪,史向华,俞根才,张新夷,阎文胜,韦世强,谢亚宁.分子束外延生长ZnO薄膜及性能研究[J].核技术,2003(01):9-12. DOI：

ZHOU Yingxue 1, 3 SHI Xianghua 2 YU Gencai 1 ZHANG Xinyi 3 YAN Wensheng 4 WEI Shiqiang 4 XIE Yaning 5 1. Growth and characterization of ZnO thin film prepared by molecular-beam epitaxy on Si(100)[J]. Nuclear techniques, 2003, (1): 9-12. DOI：

摘要

用分子束外延（MBE）和氧气氛方法

并改变束源炉和衬底生长温度

在Si（10 0 ）衬底上

采用Zn作缓冲层以解决ZnO层与衬底间的晶格失配问题

生长得到ZnO薄膜。在ZnO Zn Si（10 0 ）薄膜样品的X射线衍射（XRD）谱中

观测到ZnO的（10 0 ）、（0 0 2 ）、（10 1）、（10 2 ）和（10 3）等衍射峰 ;用原子力显微镜（AFM）观测ZnO薄膜的表面形貌

为直径约 80— 90nm的量子点

表明已得到具有纳米结构的ZnO薄膜。用同步辐射EXAFS技术研究了ZnO薄膜的局域结构

得到有关的几个结构参数

Abstract

ZnO is a II-VI compound with a wide direct gap of about 3.37eV at room temperature. It is an important compound for information techniques. The ZnO thin films are deposited on Si (100) substrate by molecular beam epitaxy (MBE) associated with oxygen atmosphere method

under different temperatures of molecular beam source and substrate. The Zn buffer layer is used in order to minimize the effect of mismatch of crystal lattice between Si and ZnO. In the X-ray diffraction spectrum of ZnO/Zn/Si (100)

peaks specific to ZnO at (100)

(002)

(101)

(102) and (103) were observed. Images from the atomic force microscope show that the ZnO films are composed of small granules with the size of 80-90nm approximately. The local structure of ZnO films has been studied by the synchrotron radiation EXAFS technique. Some local structural parameters such as bond length

coordination number and disorder degree are obtained for the first shell. We suggest that the disorder of as grown ZnO films be probably due to the existence of hanging bonds on the surface of ZnO nanometer granules.

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