The total dose radiation responses of the F-implanted CMOS amplifiers

LU Wu  GUO Qi  YU Xuefeng  REN Diyuan

doi:null

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The total dose radiation responses of the F-implanted CMOS amplifiers

更新时间：2021-03-12

- The total dose radiation responses of the F-implanted CMOS amplifiers
- NUCLEAR TECHNIQUES Issue 4, (2003)
- 作者机构：
  
  1. 中国科学院新疆物理研究所
  2. 新疆大学,乌鲁木齐,830011
  3. ,乌鲁木齐,830046
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN722
- Published：01 April 2003
- 稿件说明：
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[1]陆妩,郭旗,余学锋,任迪远,郑毓峰,张军.注氟CMOS运算放大器电路的电离辐照响应特性[J].核技术,2003(04):291-294.

LU Wu GUO Qi YU Xuefeng REN Diyuan. The total dose radiation responses of the F-implanted CMOS amplifiers[J]. Nuclear techniques, 2003, (4): 291-294.
[1]陆妩,郭旗,余学锋,任迪远,郑毓峰,张军.注氟CMOS运算放大器电路的电离辐照响应特性[J].核技术,2003(04):291-294. DOI：

LU Wu GUO Qi YU Xuefeng REN Diyuan. The total dose radiation responses of the F-implanted CMOS amplifiers[J]. Nuclear techniques, 2003, (4): 291-294. DOI：

摘要

本文研究了注氟（F）与未注F两种不同工艺CMOS运算放大器电路的电离辐照响应特性及变化规律。结果显示:在MOSFET的栅场介质中适量注入F

能明显地抑制辐照感生氧化物电荷的积累和界面态密度的增长

减少漏电流及阈电压漂移

有助于改善CMOS运算放大器电路内部各单管的辐照敏感性

从而使运放电路的整体抗辐射能力得到显著提高。

Abstract

The characteristics of the total dose radiation responses of CMOS amplifiers with normal and F-implanted process were studied and compared. It is shown that the implantation of the moderate amount of fluorine ions into the gate oxide of CMOS amplifiers could visibly restrain the growing of oxide charges and interface states

reduce the leaked current

and lessen the shifts of threshold voltage induced by the total dose radiation.

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Related Institution

Xinjiang Institute of Physics,Academia Sinica,Urumqi 830011)Zhao Yuanfu

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Xinjiang Technical Institute of Physics and Chemistry, the Chinese Academy of Sciences

中国科学院新疆物理研究所

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