Study on microstructure of AlN produced by N~+ implantation into  pure aluminium

CHEN Yongzhong1  WU Sheng1  SHEN Liru2 1

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Study on microstructure of AlN produced by N~+ implantation into pure aluminium

更新时间：2021-03-12

- Study on microstructure of AlN produced by N~+ implantation into pure aluminium
- NUCLEAR TECHNIQUES Issue 4, (2003)
- 作者机构：
  
  1. 中国工程物理研究院
  2. 核工业西南物理研究院,绵阳,621900
  3. ,成都,610041
- 作者简介：
- 基金信息：
  
  中国工程物理研究院科学技术资金(20020868)资助项目
- DOI：
  CLC： TG174.44
- Published：01 April 2003
- 稿件说明：
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[1]陈勇忠,武胜,沈丽如.氮离子注入铝的结构研究[J].核技术,2003(04):295-298.

CHEN Yongzhong1 WU Sheng1 SHEN Liru2 1. Study on microstructure of AlN produced by N~+ implantation into pure aluminium[J]. Nuclear techniques, 2003, (4): 295-298.
[1]陈勇忠,武胜,沈丽如.氮离子注入铝的结构研究[J].核技术,2003(04):295-298. DOI：

CHEN Yongzhong1 WU Sheng1 SHEN Liru2 1. Study on microstructure of AlN produced by N~+ implantation into pure aluminium[J]. Nuclear techniques, 2003, (4): 295-298. DOI：

摘要

采用掠射X射线衍射和AES方法分析了氮离子注入铝的结构和成分

采用TRIM?8程序对注入过程中氮浓度随深度的分布进行了模拟。结果表明:当温度低于300℃

能量为60 keV

用71017 /cm2和1?018 /cm2注量的氮离子注入铝时

在铝的表面生成了六方结构的AlN而不是立方结构的AlN;同时碰撞扩散作用在氮离子注入过程中居主导地位

热扩散作用和辐照增强扩散作用均不明显。

Abstract

The microstructure and composition depth profiles of N+-implanted Al specimens were investigated by means of glancing angle X-ray diffraction and Auger electron spectroscopy

and the nitrogen distribution in Al after the ion implantation was also simulated utilizing TRIM?8 code. The results showed the formation of hexagonal AlN rather than cubic AlN at temperature below 300℃ for the Al specimens implanted with fluences of 7?017/cm2 and 1?018/cm2 at 60keV. The results also suggested that the collision diffusion dominated the nitrogen implantation process while both thermal diffusion and radiation enhanced diffusion were weak.

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