Synthesis of thin layer Mo silicides by means of Mo implantation

ZHANG Tonghe; WU Yuguang

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Synthesis of thin layer Mo silicides by means of Mo implantation

更新时间：2021-03-12

- Synthesis of thin layer Mo silicides by means of Mo implantation
- NUCLEAR TECHNIQUES Issue 9, (2000)
- 作者机构：
  
  北京师范大学低能核物理研究所!教育部射线束材料工程开放实验室,北京,100875
- 作者简介：
- 基金信息：
  
  国家自然科学基金;863基金!（59501004）
- DOI：
  CLC： TQ13
- Published：01 September 2000
- 稿件说明：
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[1]张通和,吴瑜光.钼离子注入硅薄层硅化钼的合成[J].核技术,2000(09):599-603.

ZHANG Tonghe, WU Yuguang. Synthesis of thin layer Mo silicides by means of Mo implantation[J]. Nuclear techniques, 2000, (9): 599-603.
[1]张通和,吴瑜光.钼离子注入硅薄层硅化钼的合成[J].核技术,2000(09):599-603. DOI：

ZHANG Tonghe, WU Yuguang. Synthesis of thin layer Mo silicides by means of Mo implantation[J]. Nuclear techniques, 2000, (9): 599-603. DOI：

摘要

用大束流密度的钼金属离子注入硅，能够直接合成性能良好的薄层硅化物。随着束流密度的增加，硅化钼生长，薄层硅化物的方块电阻Ｒｓ明显下降，当束流密度为０．５Ａ／ｍ２时，Ｒｓ达到最小值９０ Ω，说明连续的硅化物已经形成。Ｘ衍射分析结果表明，注入层中形成了３种硅化铝Ｍｏ３Ｓｉ、Ｍｏ５Ｓｉ３和ＭｏＳｉ２经过９００℃退火后，Ｒｓ下降至４Ω，电阻率可小到０．１６μΩ·ｍ，说明硅化钼薄层质量得到了进一步的改善。大束流密度注入和退火后，硅化钼优先生长有所不同。透射电子显微镜的观察表明，连续硅化钼薄层厚度为８０ｎｍ。

Abstract

Mo silicides with good properties were synthesized by using metal Mo ion implantation with large ion flux. It was found that the Mo silicides grown up and sheet resistance Rs decreased with increasing ion flux. The minimum Rs of 90Ω was obtained when the ion flux of 0.5A/m2 was used

it indicated that continuos layer of Mo silicides were formed. X-ray diffraction analysis showed that three kinds of Mo silicides of Mo3Si

Mo5Si3 and MoSi2 were formed in Mo implanted silicon. The quality of the silicides was improved further after annealing

if the sample was annealed at 900－℃ for 20s

the Rs decreased to 4Ω

the resistivity was 0.16 μΩ·m. TEM observation showed that the depth of continuos layer of Mo silicides was about 80nm

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Related Institution

Surface Physics Laboratory, Fudan University, Shanghai 200433) 2

北京师范大学射线束技术与材料改性教育部重点实验室

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南昌大学材料科学与工程系

Institute of Low Energy Nuclear Physics, Beijing Normal University Irradiation Center

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