Response of MOS capacitor to substrate hot- carrier ejection

YU Xuefeng; Erkin; ZHANG Guoqiang; REN Diyuan; LU Wu; GUO Qi; YAN Rongliang

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Response of MOS capacitor to substrate hot- carrier ejection

更新时间：2021-03-12

- Response of MOS capacitor to substrate hot- carrier ejection
- NUCLEAR TECHNIQUES Issue 12, (2000)
- 作者机构：
  
  1. 中国科学院新疆物理研究所,乌鲁木齐,830011
  2. 中国科学院新疆
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN305
- Published：01 December 2000
- 稿件说明：
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[1]余学峰,艾尔肯,张国强,任迪远,陆妩,郭旗,严荣良.MOS电容的衬底热电子注入响应特性[J].核技术,2000(12):869-872.

YU Xuefeng, Erkin, ZHANG Guoqiang, et al. Response of MOS capacitor to substrate hot- carrier ejection[J]. Nuclear techniques, 2000, (12): 869-872.
[1]余学峰,艾尔肯,张国强,任迪远,陆妩,郭旗,严荣良.MOS电容的衬底热电子注入响应特性[J].核技术,2000(12):869-872. DOI：

YU Xuefeng, Erkin, ZHANG Guoqiang, et al. Response of MOS capacitor to substrate hot- carrier ejection[J]. Nuclear techniques, 2000, (12): 869-872. DOI：

摘要

为研究抗热载于损伤的加固技术，对国产Ｎ型ＭＯＳ电容进行了Ｆｏｗｌｅｒ－Ｎｏｒｄｈｅｉｍ衬底热电子高场注入（ＳＨＥ），并利用高频Ｃ－ＶＲ准静态Ｃ－Ｖ分析技术，从微观氧化物电荷、界面态的感生变化及其界面态的能量分布变化等角度研究了ＭＯＳ结构热载子损伤的特性和机理。

Abstract

N-type MOS capacitors have been experimented with Substrate Hot-carrier Ejection (SHE). By means of high frequency and quasi-static C-V techniques

the characteristics and mechanism of MOS structure’s damage induced by SHE have been studied from the changes of oxide charges and interface states as well as distribution of the interface state with the energy before and after SHE. The results are helpful to further harden MOS devices from hot carrier ejection damage.

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Related Author

YU Xuefeng AI Erken REN Diyuan GUO Qi ZHANG Guoqiang LU Wu

艾尔肯

任迪远

郭旗

张国强

陆妩

王宇钢

魏雄辉

Related Institution

Xinjiang Technical Institute of Physics and Chemistry, the Chinese Academy of Sciences

中国科学院新疆物理研究所

北京大学重离子物理教育部重点实验室

北京大学化学与分子工程学院

Key Laboratory of Heavy Ion Physics, Peking University, Ministry of Education, Beijing 100871, China) 2

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