Computer simulation for the formation of insulator layer of SOI by co-implantation of N~+ and O~+

LIN Qing1  LIU Xianghua2  ZHU Ming1  XIE xinyun1  LIN Chenglu1 1

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Computer simulation for the formation of insulator layer of SOI by co-implantation of N~+ and O~+

更新时间：2021-03-12

- Computer simulation for the formation of insulator layer of SOI by co-implantation of N~+ and O~+
- NUCLEAR TECHNIQUES Issue 3, (2003)
- 作者机构：
  
  1. 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室
  2. 中国科学院上海微系统与信息技术研究所离子束开放实验室
  3. 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海,200050
- 作者简介：
- 基金信息：
  
  国家重点基础研究项目(No.G20000365);国家自然科学基金(No.90101012)资助
- DOI：
  CLC： TN305.3
- Published：01 March 2003
- 稿件说明：
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[1]林青,刘相华,朱鸣,谢欣云,林成鲁.N~+、O~+共注入形成SOI绝缘埋层的计算机模拟[J].核技术,2003(03):212-216.

LIN Qing1 LIU Xianghua2 ZHU Ming1 XIE xinyun1 LIN Chenglu1 1. Computer simulation for the formation of insulator layer of SOI by co-implantation of N~+ and O~+[J]. Nuclear techniques, 2003, (3): 212-216.
[1]林青,刘相华,朱鸣,谢欣云,林成鲁.N~+、O~+共注入形成SOI绝缘埋层的计算机模拟[J].核技术,2003(03):212-216. DOI：

LIN Qing1 LIU Xianghua2 ZHU Ming1 XIE xinyun1 LIN Chenglu1 1. Computer simulation for the formation of insulator layer of SOI by co-implantation of N~+ and O~+[J]. Nuclear techniques, 2003, (3): 212-216. DOI：

摘要

将不同能量和注量的N+和O+离子依次注入于<100>硅片并高温退火

形成具有SiO2/SiOxNy/Si3N4埋层的SOI结构。本文使用在TRIM的基础上发展起来的IRIS模拟程序

并对IRIS模型进行了改进

对N+、O+离子共注入形成的SIMON结构进行了计算机模拟

并与实验制作的样品所做截面透射电镜（TEM）测试结果进行了比较

发现模拟结果与实验所得数据吻合。

Abstract

Buried layers were formed by N+(9?017/cm2) and O+(3.5?017/cm2) co-implantation into <100> silicon wafers at a temperature of 500―800oC. The implanted layers were analyzed by XTEM. To predict the quality of the buried layers

the computer simulation for the formation of SIMON structure was studied. We not only used IRIS software which developed from TRIM-94 but also revised the model of IRIS

which made it possible to simulate the process of implanting N+. The XTEM data were compared with the results of the computer simulation

and we found the two accord with each other.

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