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1. 中国科学院新疆物理研究所
2. 东北微电子研究所,乌鲁木齐,830011
3. ,沈阳,110032
Published:01 April 2003
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[1]艾尔肯,严荣良,余学锋,郭旗,陆妩,任迪远,苏秀娣.54HCT244高速CMOS电路交流特性辐照退化研究[J].核技术,2003(04):287-290.
Erkin YAN Rongliang YU Xuefeng GUO Qi LU Wu REN Diyuan. The irradiation degeneration of AC characteristic of 54HCT244 high-speed CMOS circuits[J]. Nuclear techniques, 2003, (4): 287-290.
本文研究了国产高速CMOS电路54HCT244八缓冲器/线驱动器在60Co辐照下
交流特性退化与总剂量、剂量率、辐照偏置和工艺条件的关系。研究表明
在低剂量率辐照下
延迟时间TPHL退化比高剂量率辐照下严重
且对加固电路
这一交流特性退化的剂量率效应更为明显。辐照偏置对延迟时间退化具有强烈的影响
4.5V和0V二种偏置状态将分别导致电路的TPLH和TPHL产生较早而明显地退化。
The radiation effects of the home-made high-speed CMOS circuits 54HCT244 have been studied. The results indicated that the degenerations of delay time TPHL under low dose rate is more seriously than that under high dose rate for the radiation-hardened devices. It is also shown that the radiation bias exerted serious effects on the radiation-hardened devices.
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