Characterization of the interface layer of organically modified mesoporous silicates

GONG Yanjun LI Zhihong DONG Baozhong

doi:null

您当前的位置：

首页 >

文章列表页 >

Characterization of the interface layer of organically modified mesoporous silicates

更新时间：2021-03-12

- Characterization of the interface layer of organically modified mesoporous silicates
- NUCLEAR TECHNIQUES Issue 12, (2003)
- 作者机构：
  
  1. 太原师范学院化学系
  2. 中国科学院山西煤炭化学研究所煤转化国家重点实验室
  3. 中国科学院高能物理研究所同步辐射实验室太原 030012 中国科学院山西煤炭化学研究所煤转化国家重点实验室,太原,030001
  4. ,北京,100039
- 作者简介：
- 基金信息：
  
  国家重点基础研究专项基金(G20000480)
- DOI：
  CLC： O643.3
- Published：01 December 2003
- 稿件说明：
移动端阅览
[1]巩雁军,李志宏,董宝中.有机官能化硅基介孔分子筛的界面层表征[J].核技术,2003(12):909-913.

GONG Yanjun LI Zhihong DONG Baozhong. Characterization of the interface layer of organically modified mesoporous silicates[J]. Nuclear techniques, 2003, (12): 909-913.
[1]巩雁军,李志宏,董宝中.有机官能化硅基介孔分子筛的界面层表征[J].核技术,2003(12):909-913. DOI：

GONG Yanjun LI Zhihong DONG Baozhong. Characterization of the interface layer of organically modified mesoporous silicates[J]. Nuclear techniques, 2003, (12): 909-913. DOI：

摘要

采用X射线衍射（XRD）、透射电子显微镜（TEM）、扫描电子显微镜（SEM）、红外（IR）、核磁共振（NMR）、拉曼（Raman）光谱、热重（TG）、N

吸附/脱附分析、元素分析等现代物理技术对有机官能化介孔材料的物相、表面组成、稳定性等织构性能进行表征。对所合成的系列有机官能化硅基MSU—X介孔材料

表征了各种有机硅氧烷由于其反应速率、空间位阻的不同

使其对硅基骨架的缩聚程度、孔道和表面所带来的性质差异。运用小角X射线散射方法（SAXS）实验技术对所合成的有机官能化介孔材料结构和表面的表征方法

揭示了有机官能化基团在介孔孔道的存在状态及在孔道表面所形成的界面特征。

Abstract

The characteristics of organo-functionalized mesoporous silicates were described. The incorporated organic groups in the mesochannels and their surface properties could be characterized by XRD

TEM

SEM

NMR

Roman

N2 physisorption techniques and bulk element analysis. The small angle X-ray scattering （SAXS）

a powerful tool for the mesoporous materials was described in detail. SAXS explained the distribution of organic groups that appeared to be uniform in mesoporous silicas and the characteristics of interfacial layers that led to the scattering of pore distortion and gave a negative deviation from Porod’s law.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

No data

Related Author

No data

Related Institution

No data

AI问答

Address：2019 Jialuo Road, Jiading, Shanghai, China Postal code：201800
Tel：021-39194977 Email：LHB@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
Total Visits：881003 Visits Today：530

⁰