Radiation effects of 60Co γ rays, electrons and protonson CMOS operational amplifiers

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Radiation effects of 60Co γ rays, electrons and protonson CMOS operational amplifiers

更新时间：2021-03-12

- Radiation effects of 60Co γ rays, electrons and protonson CMOS operational amplifiers
- NUCLEAR TECHNIQUES Issue 1, (1999)
- 作者机构：
  
  中国科学院新疆物理研究所!乌鲁木齐８３００１１
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN722.77
- Published：01 January 1999
- 稿件说明：
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[1]陆妩,任迪远,郭旗,余学锋,范隆,张国强,严荣良.CMOS运算放大器在不同辐射环境下的辐照响应[J].核技术,1999(01):42-47.

Radiation effects of 60Co γ rays, electrons and protonson CMOS operational amplifiers[J]. Nuclear techniques, 1999, (1): 42-47.
[1]陆妩,任迪远,郭旗,余学锋,范隆,张国强,严荣良.CMOS运算放大器在不同辐射环境下的辐照响应[J].核技术,1999(01):42-47. DOI：

Radiation effects of 60Co γ rays, electrons and protonson CMOS operational amplifiers[J]. Nuclear techniques, 1999, (1): 42-47. DOI：

摘要

介绍了ＬＦ７６５０ＣＭＯＳ运算放大器在６０Ｃｏγ射线、１ＭｅＶ电子和４、７、３０ＭｅＶ不同能量质子辐照环境中的响应规律及６０Ｃｏγ射线和１ＭｅＶ电子辐照损伤在室温和１００℃高温条件下的退火特性，探讨了引起ＣＭＯＳ运放在不同辐射环境中辐照响应出现差异的损伤机理，并对ＣＭＯＳ运放电路在不同辐射环境中表现出的与ＣＭＯＳ数字电路不同的响应特征给予了解释。

Abstract

The CMOS operational amplifiers LF7650 were subjected to irradiation by 60Co rays

1MeV electrons and protons of 4

7 and 30MeV

respectively

and theradiation responses under these irradiation conditions were studied. The annealingmeasurements were also performed on the radiation damage caused by 60Co raysand 1MeV electrons at room temperature and 100 respectively. The reason whydifferent rays (in species and energies) cause different responses was discussed

andan explanation was given to the difference in response characteristics betweenCMOS analogue and digital circuits.

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