Effect of oxides thickness on radiation damage to NPN bipolar transistors

XI Shanbin1; 2 LU Wu1 WANG Zhikuang3 REN Diyuan1 ZHOU Dong1; 2 WEN Lin1 SUN Jing1 1

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Effect of oxides thickness on radiation damage to NPN bipolar transistors

更新时间：2021-03-05

- Effect of oxides thickness on radiation damage to NPN bipolar transistors
- NUCLEAR TECHNIQUES Vol. 35, Issue 2, (2012)
- 作者机构：
  
  1. 新疆电子信息材料与器件重点实验室中国科学院新疆理化技术研究所
  2. 中国科学院研究生院
  3. 模拟集成电路国家重点实验室
- 作者简介：
- 基金信息：
  
  国家自然科学基金项目(No.10975182)资助
- DOI：
  CLC： TN386
- Published：01 February 2012
- 稿件说明：
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[1]席善斌,陆妩,王志宽,任迪远,周东,文林,孙静.氧化层厚度对NPN双极管辐射损伤的影响[J].核技术,2012,35(02):104-108.

XI Shanbin1, 2 LU Wu1 WANG Zhikuang3 REN Diyuan1 ZHOU Dong1, 2 WEN Lin1 SUN Jing1 1. Effect of oxides thickness on radiation damage to NPN bipolar transistors[J]. Nuclear techniques, 2012, 35(2): 104-108.
[1]席善斌,陆妩,王志宽,任迪远,周东,文林,孙静.氧化层厚度对NPN双极管辐射损伤的影响[J].核技术,2012,35(02):104-108. DOI：

XI Shanbin1, 2 LU Wu1 WANG Zhikuang3 REN Diyuan1 ZHOU Dong1, 2 WEN Lin1 SUN Jing1 1. Effect of oxides thickness on radiation damage to NPN bipolar transistors[J]. Nuclear techniques, 2012, 35(2): 104-108. DOI：

摘要

研究了不同氧化层厚度的两种国产NPN双极晶体管在高低剂量率下的辐射效应和退火特性。结果显示

随总剂量的增加

晶体管基极电流增大

电流增益下降

且薄氧化层的晶体管比常规厚氧化层的晶体管退化更严重。另外

两种NPN晶体管均表现出明显的低剂量率损伤增强效应。本文对各种实验现象的损伤机理进行了分析。

Abstract

Radiation damage

caused by high or low dose rate irradiation

to NPN transistors of different oxide thicknesses is investigated experimentally.The results show that base current of the transistors increased with total dose

but the current gain decreased with increasing total dose.The NPN transistors of thin oxides degraded more than those of ordinary oxide thickness.However

both types of the NPN transistors exhibited the enhanced low dose rate sensitivity(ELDRS).Mechanisms of the effects are discussed.

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Related Author

3 WANG Zhikuan4 LU Wu1

2 WANG Yiyuan1

3 XU Fayue1

3 ZHOU Dong1

3 LI Ming1

3 WANG Fei1

3 YANG Yonghui4 1

杨永晖

Related Institution

Xinjiang Technical Institute of Physics & Chemistry CAS,Urumqi 830011,China)2

新疆电子信息材料与器件重点实验室

集成电路国家重点实验室

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