XUE Yuxiong1 YANG Shengsheng1 GUO Guang2 BA Dedong1 AN Heng1 TIAN Kai1 CAO Zhou1 SHI Shuting2 SHEN Dongjun2 1. Investigation of charge collection in p-n junctions excited with pulsed laser[J]. Nuclear techniques, 2012, 35(5): 357-360.
XUE Yuxiong1 YANG Shengsheng1 GUO Guang2 BA Dedong1 AN Heng1 TIAN Kai1 CAO Zhou1 SHI Shuting2 SHEN Dongjun2 1. Investigation of charge collection in p-n junctions excited with pulsed laser[J]. Nuclear techniques, 2012, 35(5): 357-360.DOI:
Investigation of charge collection in p-n junctions excited with pulsed laser
ingle-event phenomena(SEP) is the malfunction of micro electronics devices caused by impact of an energetic heavy ion.To better elucidate the mechanisms
we measured the fast transient current resulting p-n junctions irradiated by pulsed laser.Pulse height spectra were generated to observe the spatial variations of charge collection properties.The transient current and charge collection varied at different laser energies.The charge collection was uniform within a sensitive area of the p-n diode
but it decreased in areas close to the edges.It was found that the collected charge(Q) was correlated with the laser energy(E) by Q=1.2579 E4/3.The charge generation data were compared with those obtained on a tandem accelerator with micro-beam of32S ion.