Geant4 simulation of contribution of nuclear reaction to single event upset

JIA Shaoxu BI Jinshun ZENG Chuanbin HAN Zhengsheng

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Geant4 simulation of contribution of nuclear reaction to single event upset

更新时间：2021-03-05

- Geant4 simulation of contribution of nuclear reaction to single event upset
- NUCLEAR TECHNIQUES Vol. 35, Issue 10, (2012)
- 作者机构：
  
  中国科学院微电子研究所
- 作者简介：
- 基金信息：
  
  国家自然科学基金(61176095)资助
- DOI：
  CLC： O571.1
- Published：01 October 2012
- 稿件说明：
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[1]贾少旭,毕津顺,曾传滨,韩郑生.核反应影响半导体器件单粒子翻转的Geant4仿真[J].核技术,2012,35(10):765-770.

JIA Shaoxu BI Jinshun ZENG Chuanbin HAN Zhengsheng. Geant4 simulation of contribution of nuclear reaction to single event upset[J]. Nuclear techniques, 2012, 35(10): 765-770.
[1]贾少旭,毕津顺,曾传滨,韩郑生.核反应影响半导体器件单粒子翻转的Geant4仿真[J].核技术,2012,35(10):765-770. DOI：

JIA Shaoxu BI Jinshun ZENG Chuanbin HAN Zhengsheng. Geant4 simulation of contribution of nuclear reaction to single event upset[J]. Nuclear techniques, 2012, 35(10): 765-770. DOI：

摘要

利用MC工具Geant4研究核反应对于半导体器件单粒子翻转效应（SEU）的影响

构建了研究的一般方法。辐照过程中电学与核反应物理过程的作用决定器件中敏感单元产生的淀积电荷量的分布

核反应的物理过程对于沉积较高电荷量的贡献很大。此外

利用Geant4分析静态随机存储器（SRAM）敏感单元上的后段互连材料钨对于单粒子翻转的反应截面的影响

并进行了模拟仿真。模拟结果表明

钨层的存在会加重存储器件的单粒子翻转效应。

Abstract

Single event upset(SEU) effect in semiconductor devices and integrated circuits(IC) was simulated using Geant4.General structure and simulation method were established to study SEU effect accurately.Ionization and nuclear reaction mechanisms were used to generate statistical profiles of charge deposition in sensitive volume of semiconductor devices and ICs.The results showed that the device structure with a tungsten layer above the sensitive volume could be more likely to cause an SEU.

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