Single event effects and total ionizing dose effects of typical VDMOSFET devices

LOU Jianshe1 CAI Nan1 WANG Jia2 LIU Weixin1 WU Qinzhi1 1

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Single event effects and total ionizing dose effects of typical VDMOSFET devices

更新时间：2021-04-09

- Single event effects and total ionizing dose effects of typical VDMOSFET devices
- NUCLEAR TECHNIQUES Vol. 35, Issue 6, (2012)
- 作者机构：
  
  1. 上海航天技术研究院第八○八研究所
  2. 上海航天技术研究院
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN386
- Published：01 June 2012
- 稿件说明：
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[1]楼建设,蔡楠,王佳,刘伟鑫,吾勤之.典型VDMOSFET单粒子效应及电离总剂量效应研究[J].核技术,2012,35(06):428-433.

LOU Jianshe1 CAI Nan1 WANG Jia2 LIU Weixin1 WU Qinzhi1 1. Single event effects and total ionizing dose effects of typical VDMOSFET devices[J]. Nuclear techniques, 2012, 35(6): 428-433.
[1]楼建设,蔡楠,王佳,刘伟鑫,吾勤之.典型VDMOSFET单粒子效应及电离总剂量效应研究[J].核技术,2012,35(06):428-433. DOI：

LOU Jianshe1 CAI Nan1 WANG Jia2 LIU Weixin1 WU Qinzhi1 1. Single event effects and total ionizing dose effects of typical VDMOSFET devices[J]. Nuclear techniques, 2012, 35(6): 428-433. DOI：

摘要

利用252Cf源和60Coγ射线源对典型VDMOSFET进行单粒子效应和电离总剂量效应模拟试验

给出典型VDMOSFET的单粒子烧毁（SEB）、单粒子栅穿（SEGR）效应测量结果以及不同偏置条件下漏源击穿电压随辐照剂量的变化情况。结果表明

VDMOSFET对SEB和SEGR效应以及VDMOSFET漏源击穿电压对电离总剂量效应比较敏感

空间应用时需重点考虑VDMOSFET的抗SEB和SEGR能力;考核VDMOSFET的抗电离总剂量效应能力时对阈值电压和击穿电压等敏感参数应重点关注。

Abstract

In this work

single event effects and total ionizing dose effects of typical VDMOSFET irradiated by 60Co γ-rays and 252Cf source were studied.The single event burnout and single event gate rupture(SEB/SEGR) effects were investigated

and the relationship between drain-source breakdown voltage and ionizing dose was obtained.The results showed that the VDMOSFET devices were sensitive to SEB and SEGR

and measures to improve their resistance to SEB and SEGR should be considered seriously for their space applications.The drain-source breakdown voltage was sensitive to total ionizing dose effects as the threshold voltage.In assessing the devices’ resistance to the total ionizing dose effects

both the threshold voltage and the drain-source breakdown voltage should be taken into account.

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