The research progress of microdose effect in semiconductor devices

YAN Yihua1 FAN Ruyu1; 2 GUO Xiaoqiang2 LIN Dongsheng2 GUO Hongxia2 ZHANG Fengqi2 CHEN Wei2 1

doi:null

您当前的位置：

首页 >

文章列表页 >

The research progress of microdose effect in semiconductor devices

更新时间：2021-03-05

- The research progress of microdose effect in semiconductor devices
- NUCLEAR TECHNIQUES Vol. 35, Issue 9, (2012)
- 作者机构：
  
  1. 清华大学工程物理系
  2. 西北核技术研究所
- 作者简介：
- 基金信息：
  
  国家自然科学基金项目(11175271)资助
- DOI：
  CLC： TN606
- Published：01 September 2012
- 稿件说明：
移动端阅览
[1]闫逸华,范如玉,郭晓强,林东生,郭红霞,张凤祁,陈伟.电子元器件的微剂量效应研究进展[J].核技术,2012,35(09):698-703.

YAN Yihua1 FAN Ruyu1, 2 GUO Xiaoqiang2 LIN Dongsheng2 GUO Hongxia2 ZHANG Fengqi2 CHEN Wei2 1. The research progress of microdose effect in semiconductor devices[J]. Nuclear techniques, 2012, 35(9): 698-703.
[1]闫逸华,范如玉,郭晓强,林东生,郭红霞,张凤祁,陈伟.电子元器件的微剂量效应研究进展[J].核技术,2012,35(09):698-703. DOI：

YAN Yihua1 FAN Ruyu1, 2 GUO Xiaoqiang2 LIN Dongsheng2 GUO Hongxia2 ZHANG Fengqi2 CHEN Wei2 1. The research progress of microdose effect in semiconductor devices[J]. Nuclear techniques, 2012, 35(9): 698-703. DOI：

摘要

高能重离子在其径迹周围局域空间所沉积的微剂量

足以引起器件特性的永久性退化

导致存储器状态无法改变或器件功能异常等现象。本文综述了此领域的国内外研究进展

基于局域总剂量与强库仑斥力两种失效机制

结合几种典型电子元器件的结构特征

介绍了微剂量效应的失效表征

并讨论了其主要影响因素和发展趋势。

Abstract

The localized dose deposited around the track of a heavy ion can be high enough to induce a permanent failure in the semiconductor devices

such as the stuck bit error or functional failure.In this paper

progresses in studies on microdose effect are reviewed.Two basic failure mechanisms

i.e.the localized total dose effect and the strong coulomb repulsive force effect

are discussed.Typical failure modes in several types of devices

and the main impact factors

are discussed

too.

关键词

Keywords

references

Views

下载量

CSCD

Alert me when the article has been cited

提交

Tools

Publicity Resources

Exploring the defects evolution of nuclear graphite by using micro-Raman characterization on the cross-section of ¹⁰⁷Ag⁵⁺ ion irradiated nuclear graphite at high temperature

Photoluminescence effects of a-SiO₂ films implanted with C ions and irradiated by Pb ions

Preparation of SiOC composite material using high-energy heavy ion irradiation

Effects of 80MeV ¹²C⁺⁶/u ion irradiation on bone marrow cell cycle distribution of mice

A study on characteristics of PETP solid state nuclear track detector

Related Author

MA Huilei

PENG Shancheng

ZHAO Xiuliang

HE Zhoutong

LI Yiyan

2 ZHAO Zhiming3 WANG Zhiguang2 1

LIU Chunbao1

王志光

Related Institution

University of Chinese Academy of Sciences

Shanghai Institute of Applied Physics, Chinese Academy of Sciences

School of Nuclear Science and Technology, University of South China

中国科学院近代物理研究所

Department of Physics,Heze University,Heze 274015,China) 2

AI问答

Address：2019 Jialuo Road, Jiading, Shanghai, China Postal code：201800
Tel：021-39194977 Email：LHB@sinap.ac.cn
Technical support is provided by Beijing Founder electronics co., LTD 沪ICP备05005479号-1 京公网安备11010802024621
It is recommended to read the content of this site in Chrome&IE9+. Please switch to extreme mode in browser 360.
Cookies We use cookies to help provide and enhance our service and tailor content. By continuing, you agree to the use of cookies.
Total Visits：881214 Visits Today：741

⁰