Accelerated simulation method for PNP input bipolar operational amplifiers by γ-irradiation and high temperature annealing

XU Fayue1; 3 LU Wu1; 2 WANG Yiyuan1.2.3 XI Shanbin1.2.3 LI Ming1; 3 WANG Fei1; 3 ZHOU Dong1; 3 1

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Accelerated simulation method for PNP input bipolar operational amplifiers by γ-irradiation and high temperature annealing

更新时间：2021-03-05

- Accelerated simulation method for PNP input bipolar operational amplifiers by γ-irradiation and high temperature annealing
- NUCLEAR TECHNIQUES Vol. 34, Issue 11, (2011)
- 作者机构：
  
  1. 中国科学院新疆理化技术研究所
  2. 新疆电子信息材料与器件重点实验室
  3. 中国科学院研究生院
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN722.77
- Published：01 November 2011
- 稿件说明：
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[1]许发月,陆妩,王义元,席善斌,李明,王飞,周东.PNP输入双极运算放大器ELDRS效应的~(60)Coγ辐照高温退火评估方法[J].核技术,2011,34(11):810-814.

XU Fayue1, 3 LU Wu1, 2 WANG Yiyuan1.2.3 XI Shanbin1.2.3 LI Ming1, et al. Accelerated simulation method for PNP input bipolar operational amplifiers by γ-irradiation and high temperature annealing[J]. Nuclear techniques, 2011, 34(11): 810-814.
[1]许发月,陆妩,王义元,席善斌,李明,王飞,周东.PNP输入双极运算放大器ELDRS效应的~(60)Coγ辐照高温退火评估方法[J].核技术,2011,34(11):810-814. DOI：

XU Fayue1, 3 LU Wu1, 2 WANG Yiyuan1.2.3 XI Shanbin1.2.3 LI Ming1, et al. Accelerated simulation method for PNP input bipolar operational amplifiers by γ-irradiation and high temperature annealing[J]. Nuclear techniques, 2011, 34(11): 810-814. DOI：

摘要

选用了三种型号的PNP输入双极运算放大器

在正偏和零偏状态下进行了辐照实验

由此对高剂量率辐照后高温退火加速评估方法进行了探索。结果表明

辐照后高温退火的实验结果乘以一定的倍数因子

便可较好地模拟PNP输入双极运算放大器的低剂量率辐照损伤

根据曲线的变化规律可以较快地鉴别器件是否存在低剂量率辐射损伤增强效应。

Abstract

Three types of PNP bipolar operational amplifiers were irradiated under forward bias and zero bias

and high temperature annealing accelerated evaluation methods were investigated.The results show that multiplying a certain factor to the results from high temperature annealing of the irradiated devices

the effect of enhanced low dose radiation sensitivity(ELDRS) can be better simulated

and occurrence of the ELDRS can be judged from the curves.

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