Photoluminescence effects of a-SiO<sub>2</sub> films implanted with C ions and irradiated by Pb ions

LIU Chunbao1; 2 ZHAO Zhiming3 WANG Zhiguang2 1

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Photoluminescence effects of a-SiO₂ films implanted with C ions and irradiated by Pb ions

更新时间：2021-03-05

- Photoluminescence effects of a-SiO₂ films implanted with C ions and irradiated by Pb ions
- NUCLEAR TECHNIQUES Vol. 34, Issue 10, (2011)
- 作者机构：
  
  1. 菏泽学院物理系
  2. 中国科学院近代物理研究所
  3. 西安理工大学材料科学与工程学院
- 作者简介：
- 基金信息：
  
  国家自然科学基金(No.10475102);菏泽学院科研基金(No.XY09WL02),菏泽学院博士基金(No.XY10BS02)资助
- DOI：
  CLC： O482.31
- Published：01 October 2011
- 稿件说明：
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[1]刘纯宝,赵志明,王志光.Pb离子辐照注碳a-SiO_2薄膜的光致发光性能[J].核技术,2011,34(10):740-744.

LIU Chunbao1, 2 ZHAO Zhiming3 WANG Zhiguang2 1. Photoluminescence effects of a-SiO₂ films implanted with C ions and irradiated by Pb ions[J]. Nuclear techniques, 2011, 34(10): 740-744.
[1]刘纯宝,赵志明,王志光.Pb离子辐照注碳a-SiO_2薄膜的光致发光性能[J].核技术,2011,34(10):740-744. DOI：

LIU Chunbao1, 2 ZHAO Zhiming3 WANG Zhiguang2 1. Photoluminescence effects of a-SiO₂ films implanted with C ions and irradiated by Pb ions[J]. Nuclear techniques, 2011, 34(10): 740-744. DOI：

摘要

用湿氧化法在单晶硅表面生长了非晶态SiO2薄膜

进行120 keV C离子注入和950 MeV Pb离子辐照

用荧光光谱分析样品发光特性的改变。结果发现

C离子注入和高能Pb离子辐照均能显著影响样品的发光特性

且荧光光谱的改变强烈依赖于注入和辐照剂量

预示不同注入和辐照剂量将导致不同的发光结构形成。对注入和辐照造成薄膜发光的可能来源及发光改变的机制进行了讨论。

Abstract

Amorphous SiO2 films of about 1 ?m in thickness were thermally grown on single crystalline silicon.The samples were implanted at room temperature(RT) with 120 keV C ions to doses ranging from 1.0 ? 1016 to 8.6 ? 1017 ions/cm2

and then irradiated at RT with 950 MeV Pb ions to 5.0? 1011

1.0 ? 1012 and 3.8 ? 1012 ions/cm2

respectively.Photoluminescence(PL) properties of the samples were investigated using a fluorescent spectroscopy at RT.The results show that Pb ion irradiation affected significantly the PL properties

which depended strongly on doses of the C ion implantation and Pb ion irradiation.For example

huge PL peaks at about 2.89 eV and 2.53 eV could be seen in PL spectra of the sample implanted with 5.0 ? 1011 C ions/cm2 and irradiated by 3.8 ? 1012 Pb ions/cm2.This suggests that micro-structure like 6H-SiC may be induced in the C ion-implanted and Pb ion-bombarded a-SiO2 films.It seems that special light emitters can be produced by combined ion implantation and irradiation

which is a useful way for synthesizing new type of SiO2-based light-emitting materials.

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Photoluminescence effects of a-SiO2 films implanted with C ions and irradiated by Pb ions

DOI：

摘要

Abstract

关键词

Keywords

references

Photoluminescence effects of a-SiO₂ films implanted with C ions and irradiated by Pb ions