In this work

PDSOI static random access memory(SRAM) were irradiated under the static bias condition to different total doses

and annealed at 25oC for 36 h and 100oC for 168 h.Changes in the power supply current of the devices

and their functional errors were measured and studied.The total dose radiation damage mechanisms and the correlation between the changes of power supply current and device function are discussed.For the large-scale SOI integrated circuits

this provides the possible ways and methods to further study the total dose radiation hardening and the radiation damage assessment of the satellite devices.