Single event transient circuit-level simulation of PLL

ZHAO Wen GUO Hongxia LUO Yinhong GUO Xiaoqiang ZHANG Fengqi ZHANG Keying WANG Yuanming

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Single event transient circuit-level simulation of PLL

更新时间：2021-03-05

- Single event transient circuit-level simulation of PLL
- NUCLEAR TECHNIQUES Vol. 34, Issue 5, (2011)
- 作者机构：
  
  西北核技术研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN911.8
- Published：01 May 2011
- 稿件说明：
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[1]赵雯,郭红霞,罗尹虹,郭晓强,张凤祁,张科营,王园明.锁相环单粒子瞬态效应的电路级仿真[J].核技术,2011,34(05):396-400.

ZHAO Wen GUO Hongxia LUO Yinhong GUO Xiaoqiang ZHANG Fengqi ZHANG Keying WANG Yuanming. Single event transient circuit-level simulation of PLL[J]. Nuclear techniques, 2011, 34(5): 396-400.
[1]赵雯,郭红霞,罗尹虹,郭晓强,张凤祁,张科营,王园明.锁相环单粒子瞬态效应的电路级仿真[J].核技术,2011,34(05):396-400. DOI：

ZHAO Wen GUO Hongxia LUO Yinhong GUO Xiaoqiang ZHANG Fengqi ZHANG Keying WANG Yuanming. Single event transient circuit-level simulation of PLL[J]. Nuclear techniques, 2011, 34(5): 396-400. DOI：

摘要

对130 nm工艺电荷泵锁相环（PLL

phase-locked loop）开展单粒子瞬态（SET

single event transient）的电路级仿真

根据输出端信号的最大错误脉冲和最大相移寻找SET最敏感节点。结果表明

电荷泵输出级的晶体管对SET最敏感。介绍了一种加固方法

电荷泵PLL加固前后的抗SET性能仿真比较结果表明

加固后PLL的抗SET性能提高1个量级。

Abstract

The single event transient(SET) of phase-locked loop(PLL) of a 130-nm-technology charge pump was simulated to find the most sensitive nodes according to the maximum number of errors and maximum phase displacement of the output signals.A hardening design was proposed

and its simulation results showed that output stage transistors of the charge pump were the most sensitive to SET and the SET immunity could be improved by one order for hardened phase-locked loop.

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