Incident angle effect on F+ ions interaction with β-SiC:Molecular dynamics simulation

ZHAO Chengli1; 2 SUN Weizhong3 Lü Xiaodan1 CHEN Feng1 HE Pingni1 LIU Huamin3 ZHANG Junyuan3 GOU Fujun3; 4 1

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Incident angle effect on F+ ions interaction with β-SiC:Molecular dynamics simulation

更新时间：2021-03-05

- Incident angle effect on F+ ions interaction with β-SiC:Molecular dynamics simulation
- NUCLEAR TECHNIQUES Vol. 34, Issue 1, (2011)
- 作者机构：
  
  1. 贵州大学PSI研究所MEMS课题组
  2. 贵州大学理学院
  3. 四川大学原子核科学技术研究所,辐射物理及技术教育部重点实验室
  4. 荷兰皇家科学院等离子体所
- 作者简介：
- 基金信息：
  
  国际热核聚变实验堆(ITER)计划专项(批准号:2009GB104006);贵州省优秀青年科技人才培养计划(批准号:700968101)资助
- DOI：
  CLC： TB321
- Published：01 January 2011
- 稿件说明：
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[1]赵成利,孙伟中,吕晓丹,陈峰,贺平逆,刘华敏,张俊源,苟富均.分子动力学模拟入射角度对F离子与β-SiC表面相互作用的影响[J].核技术,2011,34(01):51-55.

ZHAO Chengli1, 2 SUN Weizhong3 Lü Xiaodan1 CHEN Feng1 HE Pingni1 LIU Huamin3 ZHANG Junyuan3 GOU Fujun3, 4 1. Incident angle effect on F+ ions interaction with β-SiC:Molecular dynamics simulation[J]. Nuclear techniques, 2011, 34(1): 51-55.
[1]赵成利,孙伟中,吕晓丹,陈峰,贺平逆,刘华敏,张俊源,苟富均.分子动力学模拟入射角度对F离子与β-SiC表面相互作用的影响[J].核技术,2011,34(01):51-55. DOI：

ZHAO Chengli1, 2 SUN Weizhong3 Lü Xiaodan1 CHEN Feng1 HE Pingni1 LIU Huamin3 ZHANG Junyuan3 GOU Fujun3, 4 1. Incident angle effect on F+ ions interaction with β-SiC:Molecular dynamics simulation[J]. Nuclear techniques, 2011, 34(1): 51-55. DOI：

摘要

本文采用分子动力学方法模拟了不同入射角度对F离子与SiC表面相互作用的影响

模拟选择的入射能量为10 eV

入射角度分别为15?、30?、45?、60?和75?。模拟结果显示

F离子的沉积率随入射角度的增加而减小。当入射角度为45°时

Si原子和C原子的刻蚀率最大

且Si原子的刻蚀率大于C原子。在相互作用过程中

SiC表面形成一层Si-C-F反应层

反应层厚度随入射角度增加而减小

并且其主要成分是SiF和CF。

Abstract

In this study

molecular dynamics simulation method was used to investigate the interactions of 10 eV F ions continuously bombarding SiC surface with incident angles of 15?

30?

45?

60? and 75?.The simulation results show that the deposition rate of F decreases with increasing incident angle.It is found that when the incident angle is 45?

the etching rates of Si and C atoms reach the maximum values.The etching rate of Si atoms is greater than that of C atoms.A Si-C-F reactive layer is formed after the F ions interaction with SiC surface.The thickness of Si-C-F layer decreases with increasing incident angle

and the formation of Si-C-F layer are primarily SiF and CF.

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