New progress in SOI material and devices and their applications

LIN Chenglu ZHANG Zhengxuan LIU Weili

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New progress in SOI material and devices and their applications

更新时间：2021-03-12

- New progress in SOI material and devices and their applications
- NUCLEAR TECHNIQUES Issue 9, (2003)
- 作者机构：
  
  1. 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室
  2. 中国科学院上海微系统与信息技术研究所信息功能材料国家重点实验室,上海,200050
- 作者简介：
- 基金信息：
- DOI：
  CLC： TN304
- Published：01 September 2003
- 稿件说明：
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[1]林成鲁,张正选,刘卫丽.SOI材料和器件及其应用的新进展[J].核技术,2003(09):658-663.

LIN Chenglu ZHANG Zhengxuan LIU Weili. New progress in SOI material and devices and their applications[J]. Nuclear techniques, 2003, (9): 658-663.
[1]林成鲁,张正选,刘卫丽.SOI材料和器件及其应用的新进展[J].核技术,2003(09):658-663. DOI：

LIN Chenglu ZHANG Zhengxuan LIU Weili. New progress in SOI material and devices and their applications[J]. Nuclear techniques, 2003, (9): 658-663. DOI：

摘要

综述了绝缘层上的硅（SOI）材料的新结构包括不同绝缘埋层和不同半导体材料结构的最新进展

介绍了SOI器的新结构和SOI器件在抗辐射电子学方面的应用

报道了国内在SOI技术的研发和产业化的最新动态。

Abstract

New progress relating to new structure of SOI including differential insulator layer and top semiconductor layer is described. The new structure devices of SOI and the application of SOI devices in irradiation area are reviewed. The new progress on R&D of SOI technology in our country is reported in detail. Meanwhile

the new progress of industrialized SOI material is introduced.

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