[1]艾尔肯,余学峰,郭旗,严荣良,陆妩,张国强,任迪远.总剂量辐射对高速电路时间特性的影响[J].核技术,2003(11):834-836.

Erkin YUXuefeng GUO Qi YANRongliang LUWu ZHANG Guoqiang REN Diyuan. Effects of total dose radiation on time characteristic of high-speed CMOS circuits[J]. Nuclear techniques, 2003, (11): 834-836.

[1]艾尔肯,余学峰,郭旗,严荣良,陆妩,张国强,任迪远.总剂量辐射对高速电路时间特性的影响[J].核技术,2003(11):834-836. DOI：

Erkin YUXuefeng GUO Qi YANRongliang LUWu ZHANG Guoqiang REN Diyuan. Effects of total dose radiation on time characteristic of high-speed CMOS circuits[J]. Nuclear techniques, 2003, (11): 834-836. DOI：