A target chamber for ion implantation and ion beam analysis

Feng Yang; Jiarui Liu

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A target chamber for ion implantation and ion beam analysis

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- A target chamber for ion implantation and ion beam analysis
- Nuclear Techniques Vol. 10, Issue 12, (1987)
- 作者机构：
  
  中国科学院物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：14 August 1986，
  
  Published：1987-12
- 稿件说明：
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Feng Yang, Jiarui Liu. A target chamber for ion implantation and ion beam analysis[J]. Nuclear techniques, 1987, 10(12): 41-43,60,61.
DOI：

Feng Yang, Jiarui Liu. A target chamber for ion implantation and ion beam analysis[J]. Nuclear techniques, 1987, 10(12): 41-43,60,61. DOI：

摘要

近年来，离子注入和离子束分析技术，应用相当广泛，已扩展到许多新的领域，形成了一种多学科性的边缘学科。

离子注入已作为一种成熟的技术广泛地应用在半导体工业上，在半导体制造工艺方面，它比传统的热扩散法显示出多方面的优越性。同时在材料改性方面也引起人们的极大兴趣，许多金属部件在实际使用时起作用的是金属表面的性质，而离子注入正好是能够改变金属表面性质（如硬度、磨损、腐蚀等）的有效途径。此外，离子注入技术用来改变光学表面指定区域的反射率、折射率，这在“集成光学”中是一项有效技术，也有人利用离子注入技术研制记忆元件（如磁泡）以及提高超导材料的超导性能等。

Abstract

A stainless-steel target chamber for ion implantation and ion beam analysis in-situ

like RBS

channelling and charged particle reactions

is described. A 3-axis precise goniometer with 2-dimension parallel movements and two Au-Si surface barrier detectors with different solid angles have been istalled in the chamber. The target chamber has a good base pressure

no evidence of oil contamination

quick sample replacement and high efficiency for various ion beam analysis. Those have been demonstrated by the experiences of four years using.

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