Extrapolation chamber measurements of absorbed dose rate distributions for 1.5 MeV electron beam in silicon

Tao Jin; Guangwen Zhou; Zixiong Zhou; Xingfa Zhang; Lifu A

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Extrapolation chamber measurements of absorbed dose rate distributions for 1.5 MeV electron beam in silicon

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- Extrapolation chamber measurements of absorbed dose rate distributions for 1.5 MeV electron beam in silicon
- Nuclear Techniques Vol. 10, Issue 12, (1987)
- 作者机构：
  
  中国科学院新疆物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：17 February 1986，
  
  Published：1987-12
- 稿件说明：
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Tao Jin, Guangwen Zhou, Zixiong Zhou, et al. Extrapolation chamber measurements of absorbed dose rate distributions for 1.5 MeV electron beam in silicon[J]. Nuclear techniques, 1987, 10(12): 29-31,34,59.
DOI：

Tao Jin, Guangwen Zhou, Zixiong Zhou, et al. Extrapolation chamber measurements of absorbed dose rate distributions for 1.5 MeV electron beam in silicon[J]. Nuclear techniques, 1987, 10(12): 29-31,34,59. DOI：

摘要

本文叙述了用自制外推电离室测量1.5MeV电子束在硅中的剂量率分布。认为由电子加速器准直器散射出来的电子对硅表浅层的剂量率分布有不可忽略的影响。

Abstract

Measurement of dose rate distributions of 1.5 MeV electron beams in silicon with extrapolation chamber are discribed. It is considered tha the influence of scattering electrong on the absorbed dose rate distributions of silicon surface-shallow layers can't be ignored.

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references

中国科学院原子能研究所，射线物理测量方法，第1版，原子能出版社，北京， 1975 年，第 173 页。

李士骏，电离辐射剂量学，第1版，原子能出版社，北京， 1981 年，第 106 页。

ICRU , ICRU Report 35 , 1984 .

李士骏，电离辐射剂量学，第1版，原子能出版社，北京， 1981 年，第 3 页。

ICRU ，于耀明等译，初始能量1到50MeV电子的辐射剂量学，北京，原子能出版社， 1977 年，第 100 页。

M. J. Berger and S. M. Seltzer , PB288804 , 1977 .

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