An investigation of the effect of oxygen impurity on the formation of WSi2 and its properties by means of 16O (<italic style="font-style: italic">α</italic>, <italic style="font-style: italic">α</italic>)16O resonance scattering

Xunliang Ding; Zhonglie Wang; Yahong Qian

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An investigation of the effect of oxygen impurity on the formation of WSi₂ and its properties by means of ¹⁶O (α, α)¹⁶O resonance scattering

更新时间：2022-09-13

- An investigation of the effect of oxygen impurity on the formation of WSi₂ and its properties by means of ¹⁶O (α, α)¹⁶O resonance scattering
- Nuclear Techniques Vol. 10, Issue 9, (1987)
- 作者机构：
  
  北京师范大学低能核物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：14 April 1986，
  
  Published：1987-09
- 稿件说明：
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Xunliang Ding, Zhonglie Wang, Yahong Qian. An investigation of the effect of oxygen impurity on the formation of WSi₂ and its properties by means of ¹⁶O (α, α)¹⁶O resonance scattering[J]. Nuclear techniques, 1987, 10(9): 15-19,61.
DOI：

Xunliang Ding, Zhonglie Wang, Yahong Qian. An investigation of the effect of oxygen impurity on the formation of WSi₂ and its properties by means of ¹⁶O (α, α)¹⁶O resonance scattering[J]. Nuclear techniques, 1987, 10(9): 15-19,61. DOI：

摘要

用

O（α

α）16O共振散射在

=3.042MeV共振，分析样品中氧含量及浓度分布，研究了离子束混合引起的W-Si多层薄膜间的反应及形成的WSi

薄膜性质与膜中氧杂质浓度的关系，氧的再分布与退火温度的关系。发现随着退火温度升高，氧朝表面扩散。形成硅化物时氧从硅化物中排出，并在表面和硅化物与单晶硅衬界面积累。在350℃下用As离子辐照时，含氧较低的样品直接形成六角WSi

相，含氧较高的样品没有得到六角WSi

相。含氧较少的样品，在离子束辐照下混合较均匀

形成的二硅化钨薄膜有较大的晶粒和较小的电阻。

Abstract

The oxygen concentration and depth profile in the Si-W multiplelayer samples were measured by using the

O (

)

O resonance scattring at 3.042 MeV. The reaction between tungsten and silicon and the formed WSi

by ion beam mixing were studied as a function. of the concentrations of oxygen impurity. It has been found that at a low oxygen content

hexagonal WSi

was formed during the radiation of samples at 350℃ with As

. The silicide was transformed into tetragonal WSi

at 700℃ annealing. At higher oxygen content

hexagonal WSi

was not observed. The tetragonal WSi

was formed at 950℃ annealing. The tungsten and silicon was mixed uniformly and the formed WSi

films with larger grains have lower resistivities in the samples which contain lower oxygen content

关键词

Keywords

references

王忠烈等，核技术 , 5 , 13 ( 1986 )。

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D. M. Scott et al. , ibid , 104 , 227 ( 1983 ).

M. A. Taubenblatt et al. , J. Appl. phys. , 53 , 6308 ( 1982 ).

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M. Y. Tsai et al. , Appl. phys. lett. , 37 , 295 ( 1980 ).

B. Y. Tsaur et al. , ibid , 41 , 877 ( 1982 ).

The proceedings of international conference on semiconductor and integrated circuit technology , Published by World Scientific Publishing Co Pte Ltd. 1986 , p. 250 .

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An investigation of the effect of oxygen impurity on the formation of WSi2 and its properties by means of 16O (α, α)16O resonance scattering

DOI：

摘要

Abstract

关键词

Keywords

references

An investigation of the effect of oxygen impurity on the formation of WSi₂ and its properties by means of ¹⁶O (α, α)¹⁶O resonance scattering