Ion-implanted semiconductor γ radiation detector used for the purposes of radiation monitoring

Qili Liu; Baofu Wang; Maojie Yang; Nanzhang Wang; Mingxiao Wang; Shengxue Liu; Rugui Wang; Zhiya Zhu

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Ion-implanted semiconductor γ radiation detector used for the purposes of radiation monitoring

更新时间：2022-09-13

- Ion-implanted semiconductor γ radiation detector used for the purposes of radiation monitoring
- Nuclear Techniques Vol. 09, Issue 11, (1986)
- 作者机构：
  
  北京1044信箱
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：08 March 1985，
  
  Published：1986-11
- 稿件说明：
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Qili Liu, Baofu Wang, Maojie Yang, et al. Ion-implanted semiconductor γ radiation detector used for the purposes of radiation monitoring[J]. Nuclear techniques, 1986, 09(11): 31-32,59,60.
DOI：

Qili Liu, Baofu Wang, Maojie Yang, et al. Ion-implanted semiconductor γ radiation detector used for the purposes of radiation monitoring[J]. Nuclear techniques, 1986, 09(11): 31-32,59,60. DOI：

摘要

离子注入探测器在能量分辨率测量上虽然还赶不上面垒型探测器，但在位置灵敏探测上确大有作为，有人还用它做了P-I-N电流型探测器。国外在六十年代后期开始研制工作

。国内于七十年代后期也开展了上面两种探测器的研制

。八十年代美国ORTEC公司已有商品出售，本文介绍一种在野外较恶劣环境条件下用作剂量测量的（也可用于射线监测的）离子注入γ射线探测器

[5]

。

Abstract

This paper represents a method of preparation of ion-implanted semi-conductor γ radiation detector used for the purposes of radiation monitoring. The electrical and dosimetric performances of the detector are also introduced. They are specially suitable for the application in rugged field conditions.

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references

S. Kalbitzer , Nucl. Instr. Meth. , 54 , 223 （ 1967 ）.

E. Laegsgaard , ibid , 60 , 24 （ 1968 ）.

丁洪林等，原子能科学技术 , 1 , 81 （ 1978 ）。

中国科学院近代物理所科学技术报告汇编 . 第2集，第 86 页。

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