High resolution HPGe detector and its stability

Guogan Wang; Naitan You; Jianya Yao

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High resolution HPGe detector and its stability

更新时间：2022-09-13

- High resolution HPGe detector and its stability
- Nuclear Techniques Vol. 09, Issue 11, (1986)
- 作者机构：
  
  中国科学院上海原子核研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：04 October 1985，
  
  Published：1986-11
- 稿件说明：
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Guogan Wang, Naitan You, Jianya Yao. High resolution HPGe detector and its stability[J]. Nuclear techniques, 1986, 09(11): 28-30,59.
DOI：

Guogan Wang, Naitan You, Jianya Yao. High resolution HPGe detector and its stability[J]. Nuclear techniques, 1986, 09(11): 28-30,59. DOI：

摘要

半导体探测器具有良好的能量分辨率，在能谱分析中已引起人们广泛的兴趣。Si材料原子序数（

=14）较小，探测能量大于30keV的射线时，其效率迅速下降，因此人们选用Ge（Li）探测器。但它在制造和使用中存在两个主要的问题，一是必需用Li离子补偿Ge材料，二是Li在Ge中固有的不稳定性，使器件严禁升高到室温，即使是偶然的一次，也会导致器件的补偿度毁坏。这两个缺点，在用高纯Ge材料制备的探测器（HPGe探测器）中是不存在的，而且容易获得厚的耗尽层。例如，用净杂质浓度为10

atom/cm

的材料做的P-N结，在几百伏的偏压下，可以得到10mm厚度的耗尽层。这工作已在许多实验室开展，因为它没有经过Li离子漂移补偿，所以不象Ge（Li）探测器那样惧怕升温。本文报道用自制的HPGe探测器，经过反复的升温试验后，它的性能变化的情况。

Abstract

After storing the HPGe detector at room temperature for 1056 hours and circulating 15 times from room temperature to liquid nitrogen temperature

the performances of the detector is still excellent. FWHM of 169.1 eV and 408 eV is obtained for

Fe (5.9keV) and

241

Am(59.5keV)

respectively.

关键词

Keywords

references

Georg Georg et al . , Nucl. Instr. Meth. , 165 , 31 （ 1979 ）.

M. Slapa et al . , ibid , 196 , 575 （ 1982 ）.

王国干等，核仪器与方法 , 4 , 3 , 13 （ 1984 ）.

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