Investigation of Si surface damage induced by low energy ion sputtering

Zuyao Zhou; Congxin Ren; Guoming Chen; Jiazeng Hu; Jie Yang; Xinding Fu; Shichang Zou; Dezhang Zhu; Dexin Cao

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Investigation of Si surface damage induced by low energy ion sputtering

更新时间：2022-09-13

- Investigation of Si surface damage induced by low energy ion sputtering
- Nuclear Techniques Vol. 09, Issue 7, (1986)
- 作者机构：
  
  1.中国科学院上海冶金研究所
  2.中国科学院上海原子核研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：06 June 1985，
  
  Published：1986-07
- 稿件说明：
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Zuyao Zhou, Congxin Ren, Guoming Chen, et al. Investigation of Si surface damage induced by low energy ion sputtering[J]. Nuclear techniques, 1986, 09(7): 7-10,59.
DOI：

Zuyao Zhou, Congxin Ren, Guoming Chen, et al. Investigation of Si surface damage induced by low energy ion sputtering[J]. Nuclear techniques, 1986, 09(7): 7-10,59. DOI：

摘要

本文应用背散射沟道技术研究了低能离子轰击不同晶向表面所引起的晶格损伤与离子能量、剂量的关系，讨论了损伤形成的动力学过程。

Abstract

Silicon crystal lattice damage induced by low energy ions is measured by RBS and channeling. The dependence of the lattice damage on crystal orientation

ion energy and dose is investigated. The kinetics of damage formation is discussed.

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Keywords

references

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陈国明等，电子技术 , 10 , 5 （ 1980 ）。

H. R. Deppe et al . , Electronics , 20 , 1 , 51 （ 1977 ）.

H. Yano et al . , Proceedings of the symposium on electron and ion beam science and technology 8th international conference , 1978 , p. 582 .

张玉春等 , 电子与自动化 , 4 , 51 （ 1980 ）。

S. Datz et al . ed. , Atomic collisions in solids , Vol. 2 .

T. W. Sigmon et al . , Appl. Phys. Lett. , 24 , 105 （ 1974 ）.

Chr. Lenmann , Interaction of radiation with solids and elementary defect production , North-Hal lend Publishing Company , Amsterdam, New York, Oxford , 1977 , p. 175 .

P. Sigmund , Appl. Phys. Lett. , 14 , 3 , 114 （ 1969 ）.

P. Sigmund , Sputtering by ion bombardment: Theoretical concepts , Physics Institute, Odense University , 1980 , p. 30 .

E. Bϕgh , Can. J. Phys. , 46 , 653 （ 1968 ）.

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