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Study of the radiation effects on MOS samples and Si diodes and triodes using: 10-12 MeV electron
更新时间:2022-09-13
    • Study of the radiation effects on MOS samples and Si diodes and triodes using: 10-12 MeV electron

    • Nuclear Techniques   Vol. 09, Issue 6, (1986)
    • Received:16 November 1984,

      Published:1986-06

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  • Qiji Lai, Fengmei Wu, Yongxing Jiang, et al. Study of the radiation effects on MOS samples and Si diodes and triodes using: 10-12 MeV electron[J]. Nuclear techniques, 1986, 09(6): 14-18,59. DOI:

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