Study of the radiation effects on MOS samples and Si diodes and triodes using: 10-12 MeV electron
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Study of the radiation effects on MOS samples and Si diodes and triodes using: 10-12 MeV electron
Nuclear TechniquesVol. 09, Issue 6, (1986)
作者机构:
南京大学
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Received:16 November 1984,
Published:1986-06
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Qiji Lai, Fengmei Wu, Yongxing Jiang, et al. Study of the radiation effects on MOS samples and Si diodes and triodes using: 10-12 MeV electron[J]. Nuclear techniques, 1986, 09(6): 14-18,59.
DOI:
Qiji Lai, Fengmei Wu, Yongxing Jiang, et al. Study of the radiation effects on MOS samples and Si diodes and triodes using: 10-12 MeV electron[J]. Nuclear techniques, 1986, 09(6): 14-18,59.DOI:
Study of the radiation effects on MOS samples and Si diodes and triodes using: 10-12 MeV electron
the experimental results of the radiation effects on MOS samples and sealed Si diodes and triodes using 10-12MeV electrons are presented. The features and practical values of radiation effects by high energy electron have been analyzed.
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references
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