An investigation of the tungsten silicide formed by As ion beam mixing with Rutherford backscattering

Zhonglie Wang; Xunliang Ding; Yahong Qian

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An investigation of the tungsten silicide formed by As ion beam mixing with Rutherford backscattering

更新时间：2022-09-13

- An investigation of the tungsten silicide formed by As ion beam mixing with Rutherford backscattering
- Nuclear Techniques Vol. 09, Issue 5, (1986)
- 作者机构：
  
  北京师范大学低能核物理研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：08 March 1985，
  
  Published：1986-05
- 稿件说明：
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Zhonglie Wang, Xunliang Ding, Yahong Qian. An investigation of the tungsten silicide formed by As ion beam mixing with Rutherford backscattering[J]. Nuclear techniques, 1986, 09(5): 13-18,12,58,59.
DOI：

Zhonglie Wang, Xunliang Ding, Yahong Qian. An investigation of the tungsten silicide formed by As ion beam mixing with Rutherford backscattering[J]. Nuclear techniques, 1986, 09(5): 13-18,12,58,59. DOI：

摘要

本工作用卢瑟福背散射研究了离子束混合方法形成硅化钨的条件。通过对热烧结和离子束混合法的比较，结合X射线衍射分析相结构的结果，指出离子束混合法可降低形成二硅化钨所需的退火温度。观察到氧杂质对形成条件的影响，简单讨论了离子束混合形成硅化物的机理。

Abstract

The conditions of forming tungsten silicide with As ion beam mixing have been studied by means of Rutherford backscattering. The comparison between sintering and ion beam mixing has been performed. The phases have been also identified by X-ray diffraction. The results demonstrated that the refractory metal silicide may be formed at a reduced reaction temperature using ion beam mixing technique. The effect of oxygen impurity on silicide formation has been observed. Finally

the mechanism on the formation of the silicide by ion beam mixing is simply discussed.

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Keywords

references

J. W. Mayer et al . , Nucl. Instr. Meth. , 182/183 , 1 ( 1981 ).

Wei-Kan Wei-Kan , Backscattering spectrometry , Academic Press , New York, San Francisco, London , 1978 , p. 328 .

J. E. E. Baglin and J. Poate ed. , Thin films interfaces and interaction , Electrochemical society , Princeton , 1980 , p . 205 .

T. Kanayama et al . , Appl. Phys. Lett , 35 , 222 ( 1979 ).

S. Matteson et al . , Radiat. Effects , 42 , 217 ( 1979 ).

P. O. Revesz et al . , J. Appl. Phps. , 54 , 1860 ( 1983 ).

Samuel. T. Picraux , Nucl. Instr. Meth , 149 , 289 ( 1978 ).

F. Chernow et al . ed. , Ion implantation in semiconductors , Plenum Press , New York , 1977 , p. 363 .

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