Irradiation effects on some light emitting diodes by 14MeV neutrons

Hongjin Pan; Jinyi Rui

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Irradiation effects on some light emitting diodes by 14MeV neutrons

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- Irradiation effects on some light emitting diodes by 14MeV neutrons
- Nuclear Techniques Vol. 07, Issue 1, (1984)
- 作者机构：
  
  中国科学院上海原子核研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：30 June 1982，
  
  Published：1984-02
- 稿件说明：
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Hongjin Pan, Jinyi Rui. Irradiation effects on some light emitting diodes by 14MeV neutrons[J]. Nuclear techniques, 1984, 07(1): 62-64,78.
DOI：

Hongjin Pan, Jinyi Rui. Irradiation effects on some light emitting diodes by 14MeV neutrons[J]. Nuclear techniques, 1984, 07(1): 62-64,78. DOI：

摘要

发光二极管具有体积小、耗电少、调制性能好等优点，目前已广泛用干各个领域，它的辐照损伤研究曾有不少文章评论过

，通过辐射损伤的研究，可以对管子的性能、辐射损伤机理及加固方法提供有价值的数据。我们利用200keV中子发生器，由T（

，

）

He反应得到14MeV中子在室温条件下辐照发光二极管，并用光电倍加管、脉冲高度分析器测量在不同累积中子通量辐照下发光强度，从而得到发光二极管的光强变化与累积中子通量的关系，并初步确定辐射损伤常数。

Abstract

The effects of 14MeV neutron irradiation on light emitting diodes have been studied. If the voltage or current remains constant

the light intensity of LED decreases with the increase of neutron fluence.

The experiment has also proved that 14MeV neutron irradiation can induce a non-adialive recombination center in LED and the light intensity is controlled by diffusive current.

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Keywords

references

C. E. Barnes , IEEE Trans. Nucl. Sci. , NS-18 , 6 , 322 ( 1971 ).

J. M. Lambert et al ., IEEE Trans. Nucl. Sci. , NS-26 , 1 , 1619 ( 1972 ).

黄昆和韩汝琦，半导体物理基础，科学出版社， 1979 年，第98页。

C. E. Barnes , Phys Rev. , B 1 , 4735 ( 1970 ).

L. W. Aukerman et al ., IEEE Trans. Nucl. Sci. , NS-13 , 6 , 174 ( 1966 ).

C. E. Barnes , J. Appl. Phys. , 42 , 5 , 1941 ( 1971 ).

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