Recoil implantation of molybdenum into silicon

Wenmin Wang; Junheng Wu; Darning Zhang

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Recoil implantation of molybdenum into silicon

更新时间：2022-09-13

- Recoil implantation of molybdenum into silicon
- Nuclear Techniques Vol. 07, Issue 1, (1984)
- 作者机构：
  
  中国科学院上海原子核研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：15 March 1983，
  
  Published：1984-02
- 稿件说明：
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Wenmin Wang, Junheng Wu, Darning Zhang. Recoil implantation of molybdenum into silicon[J]. Nuclear techniques, 1984, 07(1): 55-56,77.
DOI：

Wenmin Wang, Junheng Wu, Darning Zhang. Recoil implantation of molybdenum into silicon[J]. Nuclear techniques, 1984, 07(1): 55-56,77. DOI：

摘要

在某基体的表面，真空蒸镀一层其它材料的薄膜，用离子轰击时将引起原子级联碰撞而导致基体原子和薄层原子的混合，特别是在界面区域的混合。所谓反冲注入是指薄层原子在此过程中进入基体的现象。目前，离子束混合已开始应用到半导体器件及金属等材料改性的领域中。

Abstract

120keV argon ion beams have been used to bombard thin Mo films evaporated onto silicon foil. The phenomena of the recoil implantation of Mo atoms into silicon have been investigated by RBS. Experimental results show that about 1.44 Mo atoms are recoil-implanted into silicon for each Ar ion.

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