Planar channeling studies in single crystal Si

Xianguan Long; Minghua Wang; Fuqing He; Xiufeng Peng

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Planar channeling studies in single crystal Si

更新时间：2022-09-13

- Planar channeling studies in single crystal Si
- Nuclear Techniques Vol. 07, Issue 1, (1984)
- 作者机构：
  
  四川大学原子核科学技术研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：31 January 1983，
  
  Published：1984-02
- 稿件说明：
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Xianguan Long, Minghua Wang, Fuqing He, et al. Planar channeling studies in single crystal Si[J]. Nuclear techniques, 1984, 07(1): 12-14,73.
DOI：

Xianguan Long, Minghua Wang, Fuqing He, et al. Planar channeling studies in single crystal Si[J]. Nuclear techniques, 1984, 07(1): 12-14,73. DOI：

摘要

采用静态的Molière面连续势并计及相邻各晶面的影响，计算了单晶硅‹100›、‹110›和‹111›面沟道的半角宽度以及产额极小值，同1MeV质子对单晶硅面沟道实验测量结果进行了比较。理论分析和实验测量都表明，虽然‹111›晶面有两种不同的面间距，但‹111›面沟道只存在一个坑。

Abstract

Using static moliere continuum potential for isolated plan and taking into account the effect of several adjacent plans

we have calculated the half-angular width and yields minimum of channeling dip for ‹100›

‹110› and ‹111› plans in single crystal Si and compared with the experimental results of 1-MeV proton on Si. Both theoretical analysis and experimental measurement indicate that there is only one dip for ‹111› planar channeling

even if there are two different interplanar spacings for the ‹111› plans in Si.

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references

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魏成连等，物理学报， 29 ， 1222 （ 1980 ）。

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