Electron radiation controlled lifetime of minority carriers and introduced defect character in silicon devices

Zengguang Zhang; Deren Wang; Yuming Liu; Henghui Sun; Yuan Xu

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Electron radiation controlled lifetime of minority carriers and introduced defect character in silicon devices

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- Electron radiation controlled lifetime of minority carriers and introduced defect character in silicon devices
- Nuclear Techniques Vol. 06, Issue 5, (1983)
- 作者机构：
  
  1.上海整流器厂
  2.上海化工研究院
  3.复旦大学
  4.西安整流器研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Received：15 October 1981，
  
  Published：1983-10
- 稿件说明：
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Zengguang Zhang, Deren Wang, Yuming Liu, et al. Electron radiation controlled lifetime of minority carriers and introduced defect character in silicon devices[J]. Nuclear techniques, 1983, 06(5): 40-41,48,76,77.
DOI：

Zengguang Zhang, Deren Wang, Yuming Liu, et al. Electron radiation controlled lifetime of minority carriers and introduced defect character in silicon devices[J]. Nuclear techniques, 1983, 06(5): 40-41,48,76,77. DOI：

摘要

本文介绍用1.3MeV电子束对

二极管进行辐照，得出了少子寿命随辐照剂量增加而减少的结果。辐照造成的缺陷主要为双空位。辐照器件工作稳定可靠。

Abstract

Some Pi

diodes were irradiated with 1.3MeV electron beam. It is found that the minority carrier lifetime will decrease with the increasing of radiation dose. The induced defects by radiation are mainly duel vacancies

and the irradiated devices work stably and reliably.

关键词

Keywords

references

R. O. Carlson et al . , IEEE Trans. Electron Devices , ED24 , 8 , 1103 （ 1977 ）.

C. K. Chu et al . , ISA Annual , 1975 , p. 180 .

A. O. Evwasaye , J . Appl. Phys ., 43 , 3776 （ 1976 ）.

L. C. Kimerliry , Radiation effects in semiconductor , 1976 . p. 221 .

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