p type ultra high purity silicon detector

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- p type ultra high purity silicon detector
- Nuclear Techniques Vol. 06, Issue 2, (1983)
- 作者机构：
  
  中国科学院上海原子核研究所
- 作者简介：
- 基金信息：
- DOI：
  CLC：
- Published：1983-04
- 稿件说明：
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Naitan You, Guijun Gu, Weisheng Shen. p type ultra high purity silicon detector[J]. Nuclear techniques, 1983, 06(2): 28-29,74.
DOI：

Naitan You, Guijun Gu, Weisheng Shen. p type ultra high purity silicon detector[J]. Nuclear techniques, 1983, 06(2): 28-29,74. DOI：

p型硅单晶通常用来制备具有几个毫米厚的Si（Li）探测器，如果象高纯锗一样，硅单晶的纯度足够高，它不需要进行锂漂移就可制成较厚的硅探测器。此种探测器在使用时需冷却，而在保存时可回暧到室温。我们应用浙江大学研制的超纯硅单晶，制成了灵敏面积为50mm

、厚度为1.73mm的探测器Si（Hp）-82101，在77K下，测得对

207

Bi 1063.4keV跃迁的K内转换电子能量分辨率为1.72keV，这已超过目前用高阻硅和Si（Li）探测器测量所获得的最好分辨率水平1.9keV

[1~4]

。

In this paper

the fabrication and performance of p-type ultra high purity silicon detectors are described. A 50mm

×1.73mm Si (HP) detector consists of a single crystal of p-type ultra high purity silicon supplied by Zhejiang University

and at 77 K

the resolution of the detector for

207

Bi 1063.4keV K-electrons was 1.72keV.

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