Depth-dissection of Si-SiO2 irradiated with 66Co by electron spectroscopy
|更新时间:2022-08-16
|
Depth-dissection of Si-SiO2 irradiated with 66Co by electron spectroscopy
Nuclear TechniquesVol. 13, Issue 10, (1990)
作者机构:
中国科学院新疆物理研究所
作者简介:
基金信息:
DOI:
CLC:
Received:10 August 1989,
Published:01 October 1990
稿件说明:
移动端阅览
Changshi Liu, Qinzhi Wu, Lingshan Zhang. Depth-dissection of Si-SiO2 irradiated with 66Co by electron spectroscopy[J]. Nuclear techniques, 1990, 13(10): 589-593.
DOI:
Changshi Liu, Qinzhi Wu, Lingshan Zhang. Depth-dissection of Si-SiO2 irradiated with 66Co by electron spectroscopy[J]. Nuclear techniques, 1990, 13(10): 589-593.DOI:
Depth-dissection of Si-SiO2 irradiated with 66Co by electron spectroscopy
Co are analyzed by using the depth-dissection techniques of XPS and AES. The results show that there exists an interface and that when the sample is irradiated the interface extends towards the surface of SiO
2
and the centre of the interface moves towards the surface of SiO
2
. The extension and movement are dependent on the condition of irradiation. An explanation for the experimental results is given using the Bond Strain Gradient Model.
关键词
Keywords
references
P. S Winokur et al . , IEEE Trans, Nucl. Sci . , NS-34 , ( 1987 ), 6 :.
D. Briggs , Handbook of X-ray and Ultraviolet photcelectrcn Spectroscopy , Heyden and Son Ltd , 1977 .
D. A. Shirley ed. , Electron Spectroscopy North—Holland Publishing Company , 1972 .
F. J. Grunthaner et al . , Phys. Rev. Lett . , 43 ( 1979 ), 1683 .
F. J. Grunthaner et al . , IEEE Trans. Nucl. Sci . , NS-29 ( 1982 ), 6 :.