Electrical conductivity and XPS spectra of the ion implanted Q thin films
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Electrical conductivity and XPS spectra of the ion implanted Q thin films
Nuclear TechniquesVol. 13, Issue 6, (1990)
作者机构:
1.四川大学原子核科学技术研究所
2.四川大学
作者简介:
基金信息:
DOI:
CLC:
Received:31 August 1988,
Published:01 June 1990
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Peilu Wang, Ping Zhou, Zhongyang Liu, et al. Electrical conductivity and XPS spectra of the ion implanted Q thin films[J]. Nuclear techniques, 1990, 13(6): 350-354.
DOI:
Peilu Wang, Ping Zhou, Zhongyang Liu, et al. Electrical conductivity and XPS spectra of the ion implanted Q thin films[J]. Nuclear techniques, 1990, 13(6): 350-354.DOI:
Electrical conductivity and XPS spectra of the ion implanted Q thin films
Ion implantation causes an increase of electrical conductivity of the Q thin films by 8 orders of magnitude and the saturated value is about 2×10
-3
(
Ω
cm)
-1
. The conductivity is very stable under exposure to ambient conditions. XPS analysis has shown a notable increase of carbon concentration an obvious decrease of oxygen concentration and a change of the pristine structure in the implahted zone. The results indicate that structure change is a main reason for the increase of electrical conductivity.
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references
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